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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):3A, 5A
- Input Type:Inverting
- Rise / Fall Time (Typ):14ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM5110-2MX is a dual-channel low-side gate driver manufactured by Texas Instruments, designed for driving N-channel MOSFETs in power conversion applications. It operates within a supply voltage range of 3.5 V to 14 V and delivers peak output currents of 5 A and 3 A for its two independent channels. The device features an inverting logic configuration with typical rise and fall times of 14 ns and 12 ns, respectively. Packaged in an 8-SOIC surface-mount format, it supports a junction temperature range from -40°C to +125°C, ensuring reliable performance across industrial environments.
Feature Summary
- Dual-channel architecture providing independent control for two low-side N-channel MOSFETs
- High-speed switching capability with nanosecond-level rise and fall times
- Robust thermal management supporting extended industrial operating temperatures
- Inverting input logic configuration for straightforward interface with control signals
Applications
- Synchronous buck converter designs requiring precise low-side drive
- Half-bridge and full-bridge DC-DC converter topologies
- Motor control systems utilizing N-channel MOSFET switches
- Isolated power supply gate drive circuits
Procurement Notes
Verify the specific ordering suffix matches the required package variant and RoHS compliance status. Confirm that the 8-SOIC footprint aligns with the target PCB layout constraints. Ensure the supply voltage range meets the system requirements for both minimum and maximum operational conditions. Cross-reference the datasheet revision to confirm compatibility with existing design specifications.
Selection Notes
Select this component when dual independent low-side drive is required without integrated high-side functionality. Evaluate the 5 A and 3 A current capabilities against the total gate charge and switching frequency of the target MOSFETs. Consider the inverting logic polarity relative to the upstream controller outputs. Assess the thermal dissipation requirements within the SOIC package for the expected duty cycle and ambient conditions.
Part Context
The LM5110 series belongs to Texas Instruments' portfolio of dedicated gate drivers optimized for power management ICs. Unlike the LM5111, which offers combined high-side and low-side capabilities, the LM5110 focuses exclusively on low-side driving. This specialization allows for simplified circuit design in applications where high-side drive is managed by separate controllers or bootstrap circuits.
Replacement Considerations
LM5110-2MX/NOPB serves as the direct RoHS-compliant equivalent. For single-channel requirements, the LM5110-MX may be considered if pinout compatibility is verified. Alternative dual low-side drivers from other manufacturers require careful evaluation of current ratings and propagation delays.
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