LM5110-3M/NOPB

Overview

The LM5110-3M/NOPB is a dual low-side MOSFET gate driver from Texas Instruments, housed in an 8-pin SOIC package. It provides asymmetric drive currents of 5 A peak source and 3 A peak sink to optimize switching performance. The device operates with a supply voltage range of 4.5 V to 20 V and features a dedicated input ground pin for robust noise immunity. Key electrical parameters include a typical propagation delay of 60 ns and a short pulse width capability of 25 ns. It supports a wide common-mode transient immunity of 75 V/ns and includes under-voltage lockout (UVLO) thresholds at approximately 4 V.

Feature Summary

• Asymmetric output drive strength providing 5 A source and 3 A sink currents for optimized switching control
• Dedicated input ground pin isolates sensitive logic inputs from high dv/dt noise on the power stage
• High common-mode transient immunity rated at 75 V/ns for reliable operation in noisy environments
• Integrated under-voltage lockout prevents improper gate drive during power-up or brown-out conditions

Applications

• Low-side driving of power MOSFETs in synchronous buck converters
• Gate drive stages in isolated DC-DC converter topologies
• Motor control applications requiring precise low-side switch timing
• General-purpose high-speed switching circuits utilizing N-channel MOSFETs

Procurement Notes

Verify the specific suffix '3M' indicates the standard SOIC-8 package variant distinct from the WSON or other package options within the LM5110 family. Confirm that the 'NOPB' designation ensures lead-free compliance and RoHS adherence as per Texas Instruments standards. Cross-reference the manufacturer part number directly with official TI documentation to ensure compatibility with your design's thermal and mechanical constraints.

Selection Notes

Select this component when asymmetric drive current is beneficial for balancing turn-on speed against ringing. The dedicated input ground is critical for designs where the driver ground potential fluctuates significantly relative to the system ground. Ensure the application does not require high-side or half-bridge configurations, as this device is strictly a low-side driver. Verify that the 20 V maximum supply voltage aligns with the available gate drive voltage in the target circuit.

Part Context

The LM5110 series comprises compound gate drivers designed for high-performance power management. The -3M variant specifically denotes the 8-pin SOIC package option, distinguishing it from the -3SD (WSON) or -3MX (SOIC-8 Wide) physical footprints. All variants share identical internal circuitry and electrical specifications, differing only in package geometry and thermal characteristics.

Replacement Considerations

Direct functional equivalents within the same package include the LM5110-3MX/NOPB, which shares the SOIC-8 form factor. Other LM5110 variants such as the LM5110-3SD/NOPB offer identical electrical performance but utilize a different WSON package footprint. Ensure any substitute matches the 8-pin SOIC dimensions and pinout configuration.