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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):3A, 5A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):14ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM5110-3MX/NOPB is a dual-channel compound gate driver from Texas Instruments, designed for high-performance power switching applications. It features independent high-side and low-side outputs capable of sourcing and sinking peak currents of 5A and 3A respectively. The device operates within a supply voltage range of 3.5V to 14V and supports non-inverting logic configurations. Key timing parameters include rise and fall times of 14ns and 12ns. It is housed in an 8-pin MSOP PowerPAD package and functions reliably across an extended temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture with independent high-side and low-side drivers
- Negative output voltage capability for enhanced gate drive performance
- Integrated bootstrap diode simplifies circuit design
- Controllable rise and fall times to minimize electromagnetic interference
Applications
- High-frequency synchronous buck converters
- Half-bridge and full-bridge power stages
- Isolated DC/DC converter topologies
- Motor control gate driving circuits
Procurement Notes
Verify the specific suffix '3MX' against official Texas Instruments documentation to confirm pinout and electrical characteristics match your schematic requirements. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Cross-reference the datasheet revision date with your design timeline to account for any potential manufacturing changes or obsolescence notices.
Selection Notes
Select this component when designing circuits requiring precise control over switching transitions and robust drive strength for N-channel MOSFETs. The integrated bootstrap diode reduces external component count compared to standard drivers. Consider the thermal performance of the PowerPAD package for high-power density designs where heat dissipation is critical for maintaining reliability under continuous load conditions.
Part Context
This part belongs to the LM5110 family of compound gate drivers, which are optimized for driving both high-side and low-side switches in isolated and non-isolated power supplies. Unlike simple buffer drivers, it provides the necessary level shifting and isolation support internally. It serves as a direct replacement for legacy discrete gate drive solutions, offering improved efficiency and reduced board space in modern power management systems.
Replacement Considerations
LM5110-3SD/NOPB offers identical electrical specifications but utilizes a WSON-10 package instead of MSOP-8. Verify footprint compatibility before substitution. Other variants like LM5110-1MX/NOPB may differ in pin configuration or internal protection features.
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