LM5110-3SD

LM5110-3SD

$2.77
  • Description:IC GATE DRVR LOW-SIDE 10WSON
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:e50ec3fca796 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 10WSON
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:3.5V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):3A, 5A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):14ns, 12ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:10-WDFN Exposed Pad
  • Supplier Device Package:10-WSON (4x4)
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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LM5110-3SD

Overview

The LM5110-3SD is a dual-channel compound gate driver manufactured by Texas Instruments, housed in a 10-pin WSON package. It provides independent high-side and low-side drive capabilities with a peak output current of 5 A. The device operates within a supply voltage range of 3.5 V to 14 V and supports non-inverting logic configurations. Key electrical parameters include a rise time of 14 ns and a fall time of 12 ns. It functions reliably across an extended temperature range from -40°C to +125°C, offering negative output voltage capability for robust switching performance.

Feature Summary

  • Dual-channel architecture providing independent control for high-side and low-side power switches
  • Integrated negative output voltage capability to ensure reliable turn-off of wide bandgap devices
  • High peak output current capacity supporting fast switching transitions in power applications

Applications

  • Driving GaN FETs in high-frequency power conversion systems
  • Gate driving SiC MOSFETs in industrial motor drives
  • Control circuits for isolated DC-DC converters

Procurement Notes

Verify the specific suffix (e.g., NOPB) against the datasheet to confirm lead-free compliance and exact package variant. Ensure the ordering code matches the required tape-and-reel or tube configuration. Cross-reference the manufacturer part number with official TI documentation to avoid confusion with similar series components like the LM5114.

Selection Notes

Select this component when dual independent channels are required for synchronous rectification or half-bridge topologies. Consider the 5 A drive strength and nanosecond-level propagation delays for high-speed applications. Evaluate the 10-pin WSON footprint constraints and thermal dissipation requirements relative to the expected duty cycle and ambient conditions.

Part Context

The LM5110 belongs to Texas Instruments' family of compound gate drivers designed for modern power electronics. It integrates both high-side and low-side drivers into a single compact solution, simplifying board layout compared to discrete driver combinations. This series targets applications demanding precise timing control and robust noise immunity in dense power stages.

Replacement Considerations

LM5110-3SDX/NOPB: Identical functional specifications with reel packaging instead of tube.

LM5110-3SDLM5110-3SD
$2.77
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