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LM5110-3SDX
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 10WSON
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR)
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：3.5V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2V
- Current - Peak Output (Source, Sink)：3A, 5A
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：14ns, 12ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-WDFN Exposed Pad
- Supplier Device Package：10-WSON (4x4)
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The LM5110-3SDX is a dual-channel compound gate driver manufactured by Texas Instruments, designed for high-speed switching applications. It features independent high-side and low-side outputs with a peak output current of 5 A. The unit operates within a supply voltage range of 3.5 V to 14 V and supports non-inverting logic configurations. Key electrical parameters include a rise time of 14 ns and a fall time of 12 ns. The device is housed in a 10-pin WSON package and functions reliably across an operating temperature range from -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for high-side and low-side power switches.
- Negative output voltage capability allows for optimized drive conditions in specific topologies.
- High peak output current ensures rapid charging and discharging of MOSFET/IGBT gates.
Applications
- Synchronous buck converter circuits
- Half-bridge and full-bridge power stages
- Isolated DC-DC converter designs
Procurement Notes
Verify the exact suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal pad specifications. Ensure the ordering code matches the required tape-and-reel packaging format for automated assembly processes. Cross-reference the date code and lot information to ensure component traceability and compliance with project quality standards.
Selection Notes
Select this component when independent high-side and low-side drive signals are required within a single package. The dual-channel design reduces board space compared to discrete drivers. Consider the 5 A peak current capability for driving medium-power MOSFETs or IGBTs efficiently without external boost circuitry complexity.
Part Context
This part belongs to the LM5110 series of compound gate drivers from Texas Instruments. The series focuses on integrating both high-side and low-side driving capabilities into a compact form factor. It serves as a solution for power management ICs requiring precise timing control and robust switching performance in constrained spaces.
Replacement Considerations
LM5110-3SD/NOPB
FAQ
Does the LM5110-3SDX support negative output voltage?
Yes, the device includes negative output voltage capability to optimize gate drive conditions.
What is the maximum operating temperature?
The maximum operating temperature is +125°C.
