LM5111-1M/NOPB

LM5111-1M/NOPB

$2.45
  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube

SKU:086a6c320334 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR LOW-SIDE 8SOIC
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tube
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:3.5V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):3A, 5A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):14ns, 12ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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LM5111-1M/NOPB

Overview

The LM5111-1M/NOPB is a dual-channel, inverting gate driver from Texas Instruments designed for high-speed power switching applications. It features a compound output stage capable of delivering a peak drive current of 5 A to efficiently charge and discharge MOSFET gates. The device operates within a supply voltage range of 3.5 V to 14 V and supports fast switching transitions with typical rise and fall times of 14 ns and 12 ns, respectively. Packaged in an 8-pin SOIC (MSOP) form factor, it functions reliably across an industrial temperature range of -40°C to +125°C.

Feature Summary

  • Dual-channel inverting configuration provides independent control for high-side and low-side switching stages.
  • Compound output architecture delivers high peak current to minimize switching losses and improve efficiency.
  • Integrated design ensures stable operation across wide input voltage ranges suitable for various power topologies.

Applications

  • High-frequency synchronous buck converters
  • Half-bridge and full-bridge DC-DC converter stages
  • Isolated gate driving interfaces for power MOSFETs

Procurement Notes

Verify the specific suffix 'M' against the manufacturer's official datasheet to confirm the package type and thermal characteristics. Ensure the component matches the required RoHS compliance status and check for any obsolescence notices or lifecycle changes directly from Texas Instruments before finalizing procurement plans.

Selection Notes

Select this component when a compact dual-channel solution with moderate drive strength is required for isolated or non-isolated gate driving. Consider the 5 A peak current capability relative to the target MOSFET gate charge requirements. Evaluate the SOIC package constraints against PCB space limitations and thermal dissipation needs compared to higher-current alternatives.

Part Context

The LM5111 belongs to Texas Instruments' family of specialized gate drivers aimed at optimizing power conversion performance. Unlike general-purpose logic buffers, this part is engineered specifically for driving power switches with controlled slew rates. It complements controllers like the LM5119 by providing the necessary interface between low-voltage logic signals and high-power semiconductor devices.

Replacement Considerations

Consult the official Texas Instruments cross-reference guide for verified substitutes. Potential equivalents may include other dual-channel drivers from the same family, such as the LM5113, provided pinout compatibility and electrical specifications align with the original design requirements.

LM5111-1M/NOPBLM5111-1M/NOPB
$2.45
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