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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8SOIC
- Series:-
- Mfr:Texas Instruments
- Package:Tube
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):3A, 5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):14ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM5111-1M is a dual 5A compound gate driver manufactured by Texas Instruments. It integrates high-side and low-side drivers in an 8-pin MSOP package with a PowerPAD thermal pad. The device operates from a supply voltage of 3.5V to 14V, supporting N-channel MOSFETs. Key electrical parameters include a peak output current of 5A, a rise time of 14ns, and a fall time of 12ns. It functions as an inverting driver with independent channels. The operational temperature range extends from -40°C to +125°C junction temperature.
Feature Summary
- Integrates high-side and low-side drivers for complete half-bridge control
- Provides 5A peak source and sink current capability
- Features fast switching times for efficient power conversion
- Includes integrated bootstrap diode for high-side drive
Applications
- Synchronous buck converters
- Half-bridge power stages
- Motor drive applications
- Isolated DC-DC converter interfaces
Procurement Notes
Verify the specific suffix configuration against the official datasheet to ensure correct pinout and thermal pad connectivity. Confirm RoHS compliance status if required for your assembly process. Check for any recent lifecycle notices or obsolescence warnings directly from Texas Instruments documentation before finalizing procurement plans.
Selection Notes
Select this component when a compact dual-channel solution with high peak current is required for half-bridge topologies. The integrated bootstrap diode simplifies bill of materials. Ensure the PCB layout supports the PowerPAD thermal dissipation requirements for the MSOP package to maintain reliability within the specified temperature range.
Part Context
The LM5111 belongs to the LM5111 series of compound gate drivers from Texas Instruments. It serves as a successor or alternative to earlier National Semiconductor designs like the LM5110. The series focuses on providing integrated high and low-side driving capabilities in small form factors suitable for modern power management applications.
Replacement Considerations
LM5111-1MX/NOPB: Pin-compatible variant with different packaging suffix.
FAQ
Does the LM5111-1M include an integrated bootstrap diode?
Yes, the device features an integrated bootstrap diode to simplify high-side driver biasing.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +125°C.
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