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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 8MSOP
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 14V
- Logic Voltage - VIL, VIH:0.8V, 2.2V
- Current - Peak Output (Source, Sink):3A, 5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):14ns, 12ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package:8-HVSSOP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LM5111-1MY is a dual 5A compound gate driver manufactured by Texas Instruments, originally under National Semiconductor. It utilizes an MSOP-8 package with a PowerPAD thermal pad for efficient heat dissipation. The device operates within a supply voltage range of 3.5V to 14V and supports an operating temperature range from -40°C to 125°C. Key electrical specifications include a peak output current of 5A, a rise time of 14ns, and a fall time of 12ns. It features inverting configuration logic and includes built-in overvoltage protection mechanisms.
Feature Summary
- Dual-channel architecture providing independent high-current drive capabilities for synchronous rectification applications.
- Integrated compound driver design combining speed and current capability to minimize switching losses.
- Built-in overvoltage protection circuitry to safeguard against transient voltage spikes during operation.
Applications
- Synchronous buck converter gate driving
- High-frequency DC/DC converter topologies
- Power supply control circuits requiring fast switching
Procurement Notes
Verify RoHS compliance status carefully as some listings indicate non-compliance or outdated certification codes. Confirm the specific suffix 'MY' matches the required MSOP-8 package variant. Check manufacturer lifecycle status as older National Semiconductor parts may be obsolete or end-of-life. Ensure thermal pad connectivity requirements are met for proper heat sinking in the target application design.
Selection Notes
Select this component when a compact dual gate driver with 5A peak current is required for space-constrained designs. The MSOP-8 package offers a small footprint suitable for dense PCB layouts. Consider the inverting logic configuration and specific rise/fall times to ensure compatibility with the target MOSFET or IGBT switching requirements. Evaluate thermal performance needs given the integrated PowerPAD structure.
Part Context
The LM5111 belongs to the LM5111 series of dual compound gate drivers. It is functionally related to the LM5110, which offers negative output voltage capability. The part was originally developed by National Semiconductor before its acquisition by Texas Instruments. It serves as a specialized interface between low-power control logic and high-power switching devices in power management systems.
Replacement Considerations
- LM5111-1MX/NOPB
- LM5111-2M/NOPB
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