LM5111-3M

LM5111-3M

$0.84
  • Description:BUFFER/INVERTER BASED PERIPHERAL
  • Series:-
  • Mfr:National Semiconductor
  • Package:Bulk

SKU:5506c70c5ca0 Category: Brand:

  
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Product Detailed Parameters

  • Description:BUFFER/INVERTER BASED PERIPHERAL
  • Series:-
  • Mfr:National Semiconductor
  • Package:Bulk
  • Driven Configuration:Low-Side
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:3.5V ~ 14V
  • Logic Voltage - VIL, VIH:0.8V, 2.2V
  • Current - Peak Output (Source, Sink):3A, 5A
  • Input Type:Inverting, Non-Inverting
  • Rise / Fall Time (Typ):14ns, 12ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):-

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LM5111-3M

Overview

The LM5111-3M is a dual compound gate driver manufactured by Texas Instruments, formerly National Semiconductor. It features two independent outputs capable of sourcing and sinking 5 A peak current. The device operates within a supply voltage range of 3.5 V to 14 V. It utilizes an inverting configuration with rise and fall times of 14 ns and 12 ns respectively. The component is housed in an SOIC-8 package and supports operation from -40 °C to +125 °C.

Feature Summary

  • Dual-channel architecture providing independent control for high-side and low-side switching applications
  • High peak output current capability designed for rapid MOSFET and IGBT switching transitions
  • Integrated overvoltage protection mechanisms to safeguard internal circuitry during transient events

Applications

  • Synchronous buck converter topologies requiring precise timing control
  • Half-bridge and full-bridge power stage drivers
  • Isolated gate driving circuits utilizing transformer coupling

Procurement Notes

Verify the specific suffix designation against official datasheets to confirm pinout compatibility and electrical specifications. Ensure the selected variant matches the required package type and thermal performance characteristics for the target application environment.

Selection Notes

Select this component when dual isolated or non-isolated gate drive signals are required with moderate current capabilities. Consider the inverting logic configuration and propagation delays relative to the controller IC. Evaluate thermal dissipation requirements based on the SOIC-8 package limitations and operating temperature range.

Part Context

This part belongs to the LM5111 series of compound gate drivers. The series is characterized by its ability to drive both high-side and low-side switches efficiently. The manufacturer transitioned from National Semiconductor to Texas Instruments, maintaining the product lineage under the TI portfolio.

Replacement Considerations

Cross-reference with LM5111-2MX/NOPB for identical electrical specifications and pinout compatibility. Verify package variations such as MSOP-8 options if space constraints differ.

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