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LM5111-3MX
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Product Detailed Parameters
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Bulk
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：3.5V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2V
- Current - Peak Output (Source, Sink)：3A, 5A
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：14ns, 12ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The LM5111-3MX is a dual-channel compound gate driver from Texas Instruments designed for low-side N-channel MOSFET applications. It delivers a peak output current of 5 A with an inverting configuration. The device operates within a supply voltage range of 3.5 V to 14 V and supports logic input levels of 0.8 V (VIL) and 2.2 V (VIH). Typical switching performance includes rise and fall times of 14 ns and 12 ns, respectively. It is housed in an 8-SOIC package and functions reliably across an operating temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for two low-side switches
- High peak drive capability of 5 A for rapid MOSFET switching
- Integrated overvoltage protection mechanisms
- Inverting logic interface compatible with standard control signals
Applications
- Low-side switching in synchronous buck converters
- Half-bridge and full-bridge power stage drivers
- Isolated gate driving in DC-DC converter topologies
- Motor control bridge circuits requiring high peak current
Procurement Notes
Verify the specific suffix against official Texas Instruments documentation to confirm exact pinout, thermal pad configuration, and RoHS compliance status. Ensure the ordering part number matches the required package variant and temperature grade. Cross-reference datasheet revision history for any changes in electrical characteristics or recommended operating conditions prior to final procurement.
Selection Notes
Select this component when dual low-side drive with 5 A peak current is required. Verify that the 3.5 V minimum supply voltage aligns with the system's available rail. Confirm that the inverting logic polarity matches the controller outputs. Ensure the SOIC package thermal dissipation meets the application's power density requirements under continuous operation.
Part Context
The LM5111 belongs to Texas Instruments' dedicated gate driver family, optimized for driving power MOSFETs in compact power conversion systems. Unlike single-channel variants, this dual version integrates two identical drivers in one package, reducing board space. It serves as a critical interface between low-voltage control logic and high-power switching elements in efficient power supplies.
FAQ
What is the logic input configuration of the LM5111-3MX?
The LM5111-3MX features an inverting logic configuration, meaning the output state is opposite to the input signal state.
Does the LM5111-3MX support high-side switching?
No, the LM5111-3MX is specifically designed as a low-side gate driver for N-channel MOSFETs and does not include bootstrap or high-side drive circuitry.
