LM5111-3MY

Overview

The LM5111-3MY is a dual compound gate driver manufactured by Texas Instruments, formerly National Semiconductor. It provides 5A peak source and sink output current to drive power switches efficiently. The device operates within a supply voltage range of 4.75V to 18V and supports an input logic voltage range from 2.5V to 18V. It features adjustable dead-time control with a minimum setting of 60ns. The component is housed in an 8-pin MSOP package with a PowerPAD thermal pad for enhanced heat dissipation. It functions reliably across an industrial temperature range of -40°C to 125°C.

Feature Summary

• Dual-channel architecture providing independent high-side and low-side drive capabilities for half-bridge configurations.
• Integrated adjustable dead-time control mechanism to prevent shoot-through currents in switching applications.
• Robust protection features including overvoltage lockout and thermal shutdown to ensure operational safety under fault conditions.

Applications

• High-frequency synchronous buck converters
• Half-bridge and full-bridge DC-DC converter topologies
• Motor driver circuits requiring isolated or non-isolated gate control

Procurement Notes

Verify the specific suffix against official Texas Instruments documentation to confirm pinout compatibility and electrical specifications. Ensure the ordering part number matches the required package variant and temperature grade. Cross-reference datasheet revisions to validate feature availability and performance parameters before integration into design schematics.

Selection Notes

Select this component when designing compact power stages requiring precise dead-time management and high peak drive current. Evaluate the thermal requirements of the MSOP package with PowerPAD for the intended power dissipation levels. Confirm that the input logic voltage levels are compatible with the controller IC driving the gate signals within the specified operating range.

Part Context

This device belongs to the LM5111 family of compound gate drivers designed for high-performance power conversion. The series integrates level shifting and drive circuitry to simplify the design of high-side N-channel MOSFET drivers. It replaces discrete solutions by combining multiple functions into a single integrated circuit, reducing board space and component count.

Replacement Considerations

Consult official substitution guides for verified equivalents such as the LM5111-3MYX/NOPB. Verify pin-to-pin compatibility and electrical parameter alignment before replacing components in existing designs.