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LM5111-4M/NOPB
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Product Detailed Parameters
- Description：LM5111 DUAL 5A COMPOUND GATE DRI
- Series：-
- Mfr：National Semiconductor
- Package：Bulk
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：3.5V ~ 14V
- Logic Voltage - VIL, VIH：0.8V, 2.2V
- Current - Peak Output (Source, Sink)：3A, 5A
- Input Type：Inverting, Non-Inverting
- Rise / Fall Time (Typ)：14ns, 12ns
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The LM5111-4M/NOPB is a dual-channel low-side gate driver manufactured by Texas Instruments, formerly National Semiconductor. It features a non-inverting configuration with two outputs capable of delivering 5A peak current. The device operates within a supply voltage range of 3.5V to 14V and supports surface-mount installation in an 8-SOIC package. It exhibits a rise time of 14ns and a fall time of 12ns, functioning reliably across a temperature range of -40°C to +125°C.
Feature Summary
- Dual-channel architecture providing independent control for multiple power switches
- High peak output current capability designed for driving large power MOSFETs
- Compact 8-SOIC surface-mount package suitable for space-constrained designs
Applications
- AC-DC converters
- DC-DC converters
- Motor drives
- Industrial control systems
Procurement Notes
Verify the manufacturer designation as Texas Instruments, which acquired National Semiconductor's semiconductor business. Confirm the specific suffix '4M' indicates the pinout variant compatible with the standard SOIC-8 footprint. Ensure the 'NOPB' suffix confirms lead-free and RoHS compliance status before finalizing procurement orders for production integration.
Selection Notes
Select this component when a dual low-side driver with high current capability is required for synchronous rectification or half-bridge applications. The non-inverting logic simplifies control interface design compared to inverting alternatives. Consider the 8-SOIC package thermal performance and ensure adequate PCB copper area for heat dissipation given the 5A output drive strength.
Part Context
This part belongs to the LM5111 series of gate drivers, which also includes single-channel variants like the LM5112. The series is designed to complement National Semiconductor's (now TI) power management portfolio, such as the LM5000 PWM controllers. These drivers are engineered to provide flexible solutions for driving large power MOSFETs in compact packages.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing control signals and thermal requirements if considering alternative dual gate drivers from other manufacturers.
