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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 12DSBGA
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:1.76V, 1.89V
- Current - Peak Output (Source, Sink):1.2A, 5A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):7ns, 1.5ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:12-WFBGA, DSBGA
- Supplier Device Package:12-DSBGA
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):107 V
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Overview
The LM5113TME/NOPB is a half-bridge gate driver designed for enhancement mode Gallium Nitride (GaN) FETs. It operates with a supply voltage range of 4.5 V to 5.5 V and delivers peak output currents of 1.2 A or 5 A. The device supports switching frequencies up to 1 MHz and features low propagation delays, with maximum turn-on and turn-off delays of 28 ns and 26.5 ns respectively. It functions within an ambient temperature range of -40°C to +125°C and is housed in a WSON-10 package.
Feature Summary
- Optimized for driving enhancement mode GaN FETs in synchronous buck applications
- Provides high current capability with selectable drive strength
- Features non-inverting logic configuration for straightforward control integration
Applications
- Synchronous buck converters utilizing GaN transistors
- High-frequency power supply designs requiring fast response
- Applications demanding high current gate drive capability
Procurement Notes
Verify the specific suffix against the manufacturer's latest documentation to confirm pinout and electrical characteristics. Ensure the ordering part number matches the required drive current option and package type. Cross-reference the RoHS status and lead time requirements with authorized distributors prior to procurement to ensure compliance with project specifications.
Selection Notes
Select this component when designing circuits that require precise control of enhancement mode GaN FETs. Consider the 5A peak current output for efficient switching performance. Evaluate the operating temperature range and package constraints to ensure compatibility with the target thermal management strategy and PCB layout requirements.
Part Context
This device belongs to Texas Instruments' family of half-bridge gate drivers. It is engineered specifically for modern wide-bandgap semiconductor technologies, offering superior speed and efficiency compared to traditional silicon-based drivers. The series supports various packaging options to accommodate different board space and thermal dissipation needs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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