LM5113TMX/NOPB

Overview

The LM5113TMX/NOPB is a half-bridge gate driver designed for GaNFET applications, housed in a 12-pin DSBGA (YFX) package. It provides a peak source current of 1.2 A and a peak sink current of 5 A. The device supports a high-side floating bias voltage rail operating up to 100 VDC with internal bootstrap supply voltage clamping. It functions within an input supply range of 4.5 V to 5.5 V and operates reliably across a temperature range of -40°C to +125°C.

Feature Summary

• Optimized for driving GaNFETs with asymmetric peak source and sink currents
• Supports high-side floating operation with bias rails up to 100 VDC
• Includes internal bootstrap supply voltage clamping for protection

Applications

• GaN-based power conversion systems
• High-frequency DC-DC converters
• Half-bridge switching topologies

Procurement Notes

Verify the specific suffix 'TMX' corresponds to the DSBGA YFX package and reel packaging configuration. Confirm RoHS compliance status via the official datasheet. Ensure the component meets the required thermal and electrical specifications for the intended application environment before procurement.

Selection Notes

Select this component when designing circuits requiring dedicated drive strength for GaN transistors. The 1.2 A source and 5 A sink currents allow for controlled switching speeds. The 100 V rating suits medium-voltage applications. Verify that the small form factor fits the PCB layout constraints.

Part Context

This part belongs to the Texas Instruments LM5113 series of half-bridge gate drivers. It is specifically engineered to interface control logic with power switches, providing the necessary current amplification and isolation characteristics for efficient power stage operation in modern electronic designs.

Replacement Considerations

Check for direct substitutes such as the LM5113SDX/NOPB or LM5113TME. Verify pin compatibility and electrical parameters. Note that some variants may have different package types or end-of-life statuses.