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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 6DSBGA
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.75V ~ 5.25V
- Logic Voltage - VIL, VIH:1.8V, 1.7V
- Current - Peak Output (Source, Sink):7A, 5A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):375ps, 350ps
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UFBGA, DSBGA
- Supplier Device Package:6-DSBGA
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LMG1020YFFR is a single-channel low-side gate driver from Texas Instruments, designed for high-speed applications. It features a propagation delay of 2.5 ns and a minimum pulse width of 1 ns. The device delivers a peak source current of 7 A and a peak sink current of 5 A with typical rise/fall times of 400 ps. It operates on a 5 V supply (4.75 V to 5.25 V) and includes UVLO and OTP protection. Packaged in a 6-DSBGA (0.8 mm x 1.2 mm) format, it supports independent drive strength adjustment via external resistors.
Feature Summary
- Ultra-fast switching performance with minimal propagation delay and narrow pulse width capability
- Independent adjustable drive strength for pull-up and pull-down edges via external resistors
- Integrated protection mechanisms including under-voltage lockout and over-temperature shutdown
Applications
- LiDAR systems
- Time-of-flight sensors
- Face recognition modules
- Class-D wireless chargers
- GaN-based synchronous rectifiers
Procurement Notes
Verify the specific suffix YFFR corresponds to the tape-and-reel packaging configuration. Confirm the 6-DSBGA package dimensions match your PCB footprint requirements. Ensure the 5V supply voltage range aligns with your system design. Check for RoHS compliance status if required by your manufacturing standards.
Selection Notes
Select this component when driving GaN FETs or logic-level MOSFETs requiring high speed and strong drive current. The low-side configuration suits synchronous rectification or half-bridge bottom legs. Consider the small DSBGA package for space-constrained designs. Verify thermal management needs given the high peak currents and operating temperature range.
Part Context
This part belongs to the LMG1020 series of low-side GaN drivers. It complements other TI power management solutions by providing precise control for wide-bandgap semiconductors. The family focuses on minimizing switching losses in high-frequency converters.
FAQ
How is the drive strength adjusted?
Drive strength is independently adjusted for pull-up and pull-down edges by connecting external resistors between the gate and the respective output pins.
What protection features are included?
The device includes Under-Voltage Lockout (UVLO) and Over-Temperature Protection (OTP) to safeguard against overload or fault conditions.
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