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Product Detailed Parameters
- Description:IC GATE DRVR LOW-SIDE 6DSBGA
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Low-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel, P-Channel)
- Voltage - Supply:4.75V ~ 5.25V
- Logic Voltage - VIL, VIH:1.8V, 1.7V
- Current - Peak Output (Source, Sink):7A, 5A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):375ps, 350ps
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UFBGA, DSBGA
- Supplier Device Package:6-DSBGA
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LMG1020YFFT is a single-channel low-side gate driver from Texas Instruments, designed for driving GaN FETs and logic-level MOSFETs in high-speed applications. It features an extremely fast propagation delay of 2.5 nanoseconds and supports pulse widths as small as 1 nanosecond. The device provides independent control over drive strength for both pull-up and pull-down edges via external resistors connected between the gate and output pins. It operates within a supply voltage range of 4.75 V to 5.25 V and delivers peak output currents of 7 A (source) and 5 A (sink). The component includes built-in under-voltage lockout (UVLO) and over-temperature protection (OTP) for fault management.
Feature Summary
- Ultra-fast switching performance with 2.5 ns propagation delay and support for 1 ns minimum pulse width
- Independent edge rate control allowing separate adjustment of rise and fall times via external resistors
- Integrated protection mechanisms including under-voltage lockout and over-temperature shutdown
Applications
- LiDAR systems requiring precise timing control
- Time-of-flight sensing modules
- Facial recognition hardware components
- High-frequency power converters utilizing low-side drivers
Procurement Notes
Verify the specific suffix YFFT against official datasheets to confirm package type and tape/reel specifications. Ensure compatibility with the target PCB footprint for the DSBGA-6 package. Cross-reference electrical parameters such as supply voltage limits and output current capabilities with system requirements before procurement. Confirm RoHS compliance status through manufacturer documentation.
Selection Notes
Select this component when designing circuits that demand minimal signal latency and precise edge shaping for wide-bandgap semiconductors. The independent drive strength adjustment is critical for optimizing electromagnetic interference and switching losses. Ensure the application environment stays within the specified operating temperature range of -40°C to +125°C.
Part Context
This part belongs to the LMG1020 series of low-side gate drivers. It is specifically engineered for modern power electronics that utilize Gallium Nitride transistors or high-performance MOSFETs. The design focuses on minimizing dead-time and maximizing switching speed while maintaining robust protection features essential for reliable operation in dense power stages.
Replacement Considerations
Check for LMG1020YFFR as a potential alternative variant within the same family. Verify pin-out compatibility and electrical parameter equivalence before substitution. Ensure any replacement maintains the required 6-DSBGA package dimensions and thermal characteristics.
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