LMG1205YFXR

$2.51

Description：IC GATE DRVR HALF-BRIDGE 12DSBGA
Series：-
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e26854b1a01 Category: Gate Drivers Brand: Texas Instruments

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Product introduction

LMG1205YFXR is listed in the Gate Driver range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC GATE DRVR HALF-BRIDGE 12DSBGA. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for LMG1205YFXR

Description：IC GATE DRVR HALF-BRIDGE 12DSBGA
Series：-
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
Driven Configuration：Half-Bridge
Channel Type：Independent
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：4.5V ~ 5.5V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：1.2A, 5A
Input Type：TTL
Rise / Fall Time (Typ)：7ns, 3.5ns
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：12-WFBGA, DSBGA
Supplier Device Package：12-DSBGA
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：100 V

Gate Driver datasheet and documents for LMG1205YFXR

LMG1205YFXR

Gate Driver Overview

The LMG1205YFXR is a half-bridge gate driver designed for Gallium Nitride (GaN) transistors. It features two independent drivers with 5 A output current capability. The device operates on a 4.5 V to 5.5 V supply. It provides fast switching performance with a 7 ns rise time and 3.5 ns fall time. Propagation delays are limited to 50 ns maximum for both turn-on and turn-off states. The component functions within an ambient temperature range of -40°C to +125°C and is housed in a DSBGA-12 package.

Gate Driver Feature Summary

Integrated high-side and low-side driver configuration optimized for GaN devices
Fast switching characteristics with nanosecond-level rise and fall times
Symmetrical propagation delay limits ensuring precise timing control

Gate Driver Applications

Driving enhancement-mode GaN power transistors
High-frequency DC-DC converter topologies
Resonant power conversion circuits

Gate Driver Procurement Notes

Verify the specific suffix 'YFXR' against the manufacturer's official datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering part number matches the exact pinout and electrical parameters defined in the latest Texas Instruments documentation before finalizing procurement orders.

Gate Driver Selection Notes

Select this component when driving GaN FETs requiring a dedicated 5 A peak drive current. The 4.5 V to 5.5 V logic supply requirement must be accommodated in the system design. Consider the DSBGA-12 package size for thermal management and PCB layout constraints relative to the target application's power density requirements.

Gate Driver Part Context

This part belongs to the LMG1205 series, which is a family of gate drivers specifically engineered for wide-bandgap semiconductor applications. The series focuses on minimizing dead-time and maximizing switching speed for efficient power conversion systems utilizing GaN technology.