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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 12DSBGA
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 5.5V
- Logic Voltage - VIL, VIH:1.76V, 1.89V
- Current - Peak Output (Source, Sink):1.2A, 5A
- Input Type:TTL
- Rise / Fall Time (Typ):7ns, 3.5ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:12-WFBGA, DSBGA
- Supplier Device Package:12-DSBGA
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):100 V
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Overview
The LMG1205YFXT is a half-bridge gate driver from Texas Instruments designed for Gallium Nitride (GaN) transistors. It features dual drivers with high-side and low-side outputs, housed in a DSBGA-12 package. The device operates on a supply voltage between 4.5 V and 5.5 V, delivering a peak output current of 5 A. Key timing parameters include a rise time of 7 ns, a fall time of 3.5 ns, and maximum delay times of 50 ns for both turn-on and turn-off states. It functions within a temperature range of -40°C to +125°C.
Feature Summary
- Optimized for driving GaN FETs with dedicated high-side and low-side channels
- Provides symmetrical switching performance with fast rise and fall times
- Integrated protection against shoot-through via configurable dead-time control
Applications
- High-frequency power conversion circuits using GaN devices
- Point-of-load converters requiring compact half-bridge topologies
- Industrial motor drives utilizing wide-bandgap semiconductors
Procurement Notes
Verify the specific suffix 'YFXT' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and quantity per reel. Ensure compatibility with the intended PCB footprint for the DSBGA-12 package. Cross-reference RoHS compliance status directly with the component documentation prior to procurement.
Selection Notes
Select this component when designing circuits that require precise control of GaN-based half-bridge switches. The 5 A output capability supports typical GaN drive requirements. Consider the thermal performance of the DSBGA-12 package relative to the application's power dissipation needs and ambient operating conditions.
Part Context
This part belongs to the LMG1205 series of GaN gate drivers. It serves as a specialized interface between logic-level control signals and high-speed power stages. The series focuses on minimizing propagation delays and ensuring reliable operation in demanding power electronics environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
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