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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 19WQFN
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.75V ~ 5.25V, 6V ~ 18V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):1.5A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):500ps, 500ps
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:19-WFQFN Exposed Pad
- Supplier Device Package:19-WQFN (3x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):200 V
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Overview
The LMG1210RVRR is a half-bridge MOSFET gate driver manufactured by Texas Instruments, housed in a 19-WQFN package. It features dual independent drivers with peak output currents of 1.5 A and 3 A. The device supports supply voltages from 4.75 V to 18 V and operates within a temperature range of -40°C to +125°C. Key electrical parameters include rise and fall times of 500 ps, propagation delay up to 20 ns, and quiescent current of 380 uA. It accepts TTL logic inputs and provides high-side voltage support up to 200 V.
Feature Summary
- Supports high-side switching with bootstrap voltage capability up to 200 V for driving N-channel MOSFETs.
- Delivers fast switching performance with 500 ps rise and fall times to minimize switching losses.
- Integrates two independent drivers in a compact surface-mount package for space-constrained designs.
Applications
- High-frequency DC-DC converter topologies
- Motor drive systems requiring isolated or floating gate control
- Power supply stages utilizing N-channel MOSFETs
Procurement Notes
Verify the suffix 'R' indicates reel packaging when ordering. Confirm the specific variant matches design requirements, as 'RVRT' denotes cut tape. Ensure compatibility with 19-WQFN footprint and thermal pad specifications during PCB layout. Check moisture sensitivity level handling procedures prior to assembly.
Selection Notes
Choose this component for applications requiring moderate current drive with ultra-fast transition times. Compare against LMG1210RVRT if cut-tape quantities are preferred over reel volumes. Evaluate thermal dissipation capabilities within the WQFN-19 package for high-power density implementations.
Part Context
This part belongs to the LMG1210 series of half-bridge gate drivers designed for efficient power conversion. It complements other Texas Instruments power management solutions by providing precise control signals for external switching elements. The series focuses on balancing speed, efficiency, and integration for modern power electronics.
Replacement Considerations
- LMG1210RVRT
FAQ
What is the maximum high-side voltage supported?
The device supports a maximum high-side voltage of 200 V using bootstrap configuration.
Does the LMG1210RVRR include a shutdown function?
No, the standard LMG1210RVRR does not include a dedicated shutdown pin; it operates based on input signal states.
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