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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 19WQFN
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.75V ~ 5.25V, 6V ~ 18V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):1.5A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):500ps, 500ps
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:19-WFQFN Exposed Pad
- Supplier Device Package:19-WQFN (3x4)
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):200 V
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Overview
The LMG1210RVRT is a half-bridge gate driver manufactured by Texas Instruments, designed for high-speed switching applications. It features independent high-side and low-side drivers with peak output currents of 1.5 A (source) and 3 A (sink). The device supports bootstrap voltages up to 200 V and operates within a supply voltage range of 4.75 V to 18 V. Key electrical parameters include rise and fall times of 500 ps, propagation delays of 20 ns maximum, and dead-time capabilities of 18 ns. It functions in non-inverting mode and is housed in a 19-WQFN package.
Feature Summary
- Provides independent high-side and low-side drive channels for half-bridge configurations.
- Delivers fast switching performance with sub-nanosecond rise and fall times.
- Supports high-voltage operation with a 200 V bootstrap rating.
- Includes configurable dead-time control to prevent shoot-through.
Applications
- Gallium Nitride (GaN) FET driver circuits
- Silicon MOSFET half-bridge power stages
- High-frequency DC-DC converters
- Motor drive inverters
Procurement Notes
Verify the specific suffix 'RVRT' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the 19-WQFN thermal pad requirements align with the target PCB layout for adequate heat dissipation. Ensure the input logic levels are compatible with the controlling microcontroller or FPGA outputs before finalizing the bill of materials.
Selection Notes
Select this component when sub-nanosecond switching speeds are critical for minimizing switching losses in high-frequency topologies. The 200 V high-side capability makes it suitable for medium-voltage applications. Consider the 19-WQFN package size constraints and the need for careful layout to manage parasitic inductance given the high di/dt capabilities of the driver.
Part Context
This part belongs to the LMG1210 series of gate drivers from Texas Instruments. The series is engineered specifically for driving both Silicon MOSFETs and GaN FETs in half-bridge arrangements. The RVRT suffix indicates the reel-based packaging variant, distinguishing it from cut-tape or tube options within the same functional family.
Replacement Considerations
- LMG1210RVRR
FAQ
What is the maximum bootstrap voltage supported by the LMG1210RVRT?
The device supports a maximum high-side bootstrap voltage of 200 V.
Does the LMG1210RVRT support inverting logic inputs?
No, the LMG1210RVRT operates in non-inverting mode only.
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