LMG2100R026VBNR

Full Half-Bridge (H Bridge) Drivers Overview

The LMG2100R026VBNR is a GaN half-bridge power stage from Texas Instruments, integrating two enhancement-mode GaN FETs with a dedicated high-frequency gate driver. It features a 93V continuous and 100V pulsed voltage rating with an on-resistance of 3.5 mΩ. The device operates with a 5V external bias supply and supports TTL logic inputs compatible with 3.3V and 5V levels. Key electrical parameters include an output current of 8A, a maximum propagation delay of 55ns, and an operating temperature range from -40°C to +125°C. It is housed in a VQFN-16 package.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates a half-bridge GaN FET pair with a specialized gate driver in a single lead-free package for minimized parasitic elements.
• Features proprietary bootstrap voltage clamping technology to ensure the gate voltage remains within safe operating limits for enhanced mode GaN FETs.
• Includes internal undervoltage lockout protection for power rails to prevent unreliable switching conditions.
• Offers low power consumption and high-voltage slew rate switching characteristics that result in reduced ringing during operation.

Full Half-Bridge (H Bridge) Drivers Applications

• Buck, boost, and buck-boost converters
• LLC resonant converters
• Solar inverters and power optimizers
• Telecommunications and server power supplies
• Motor drives

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix 'VBNR' against the manufacturer's official datasheet to confirm packaging details such as reel or cut tape specifications. Ensure compatibility with the required 5V bias supply and TTL input logic levels. Confirm thermal management requirements, as the component relies on exposed pad cooling for optimal performance under load. Check for moisture sensitivity classification prior to storage and handling.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when a compact, integrated solution for high-frequency switching is required without the complexity of discrete GaN and driver selection. It is suitable for designs needing a 100V rating with low on-resistance. Consider the VQFN-16 package constraints for PCB layout and thermal dissipation. Verify that the application can provide the necessary 5V bias voltage and that the input signals are compatible with the specified logic thresholds.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the LMG2100R026 series of GaN power stages. It is distinct from standalone gate drivers like the LMG2610RRGR, which require external FETs. The LMG2100R026VBNR integrates the power switches and driver, offering a simplified design path for high-efficiency power conversion topologies compared to traditional silicon MOSFET solutions.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative Texas Instruments GaN power stages based on voltage ratings and package compatibility if substitution is necessary.

Full Half-Bridge (H Bridge) Drivers FAQ

What is the typical propagation delay of the LMG2100R026?

The typical propagation delay is 33ns, with a maximum specified delay of 55ns.

Does the LMG2100R026 support shutdown functionality?

No, the device does not include a shutdown pin or feature according to the specifications.

How is the gate voltage protected in this device?

It uses a proprietary bootstrap voltage clamping technique to keep the gate voltage within the safe operating area of the enhancement-mode GaN FETs.