Full Half-Bridge (H Bridge) Drivers LMG2100R044RARR product image

LMG2100R044RARR

$7.74
  • Description:100-V 4.4-M HALF-BRIDGE GAN FET
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:bae60e0b6bf3 Category: Brand:

  
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LMG2100R044RARR is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is 100-V 4.4-M HALF-BRIDGE GAN FET. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for LMG2100R044RARR

  • Description:100-V 4.4-M HALF-BRIDGE GAN FET
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Output Configuration:Half Bridge
  • Applications:Synchronous Buck Converters
  • Interface:PWM
  • Load Type:Inductive, Capacitive, Resistive
  • Technology:NMOS
  • Rds On (Typ):4.4mOhm
  • Current - Output / Channel:35A
  • Current - Peak Output:125A
  • Voltage - Supply:4.75V ~ 5.25V
  • Voltage - Load:0V ~ 90V
  • Operating Temperature:-40°C ~ 125°C
  • Features:Bootstrap Circuit
  • Fault Protection:UVLO
  • Mounting Type:Surface Mount
  • Package / Case:17-PowerVQFN
  • Supplier Device Package:17-VQFN-FCRLF (5.5x4.5)
  • Grade:-
  • Qualification:-

Full Half-Bridge (H Bridge) Drivers datasheet and documents for LMG2100R044RARR

LMG2100R044RARR

Full Half-Bridge (H Bridge) Drivers Overview

The LMG2100R044RARR is a 100 V, 35 A half-bridge GaN power stage from Texas Instruments. It integrates two 4.4 mΩ enhancement-mode GaN FETs with a high-speed driver in a compact VQFN-FCRLF-16 package. The device supports 90 V continuous and 100 V pulsed voltage ratings, enabling high-voltage slew rate switching with minimal ringing. It operates with a 5 V external bias supply and accepts 3.3 V or 5 V logic inputs. Designed for high-frequency operation, it features low parasitic inductance and zero reverse recovery characteristics.

Full Half-Bridge (H Bridge) Drivers Feature Summary

  • Integrates dual 4.4 mΩ GaN FETs with a dedicated high-speed gate driver for simplified design
  • Supports 3.3 V and 5 V logic input levels independent of the VCC bias voltage
  • Utilizes proprietary bootstrap voltage clamping to maintain gate voltage within safe operating limits
  • Employs a leadless package platform to minimize parasitic elements and optimize thermal performance

Full Half-Bridge (H Bridge) Drivers Applications

  • Telecommunications and data communication power supplies
  • Industrial power systems and DC-DC converters
  • Synchronous buck and boost converter topologies
  • High-density power modules requiring compact layouts

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the suffix RARR indicates reel packaging when ordering. Confirm the component matches the VQFN-FCRLF-16 footprint and pinout requirements for your PCB layout. Ensure the design accommodates the 5 V external bias supply requirement. Check for moisture sensitivity handling instructions during storage and assembly processes.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for applications demanding high efficiency and reduced magnetic component size due to high switching frequencies. It is suitable where space constraints limit the use of discrete MOSFET solutions. Consider the integrated protection features and low output capacitance for optimizing transient response in power conversion circuits.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the LMG2100R044 series of GaN power stages. It represents an evolution in integrated power electronics, combining wide-bandgap semiconductor technology with advanced driver circuitry. The series targets modern power architectures that prioritize power density and switching speed over traditional silicon-based approaches.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Consult official substitution guides for equivalent half-bridge GaN stages. Verify compatibility of drive requirements and thermal characteristics before replacing discrete components or alternative integrated power stages.

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$7.74
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