LMG2652RFBR

Full Half-Bridge (H Bridge) Drivers Overview

The LMG2652RFBR is a Gallium Nitride (GaN) half-bridge power switch manufactured by Texas Instruments. It integrates a high-side and low-side GaN transistor with an integrated gate driver in a single package. The device features a typical on-resistance of 140 milliohms for the combined LS and HS channels. It operates within a supply voltage range of 7.5V to 26V for the high side and 10V to 26V for the low side, supporting a maximum load voltage of 650V. The component is housed in a 19-VQFN (8x6 mm) surface-mount package and is rated for junction temperatures up to 150°C.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates a 650V GaN half-bridge with dedicated gate drivers for simplified design
• Includes built-in protection mechanisms such as over-current, over-temperature, and under-voltage lockout
• Features bootstrap circuitry and diode emulation for efficient high-side driving

Full Half-Bridge (H Bridge) Drivers Applications

• DC-DC converters
• DC motor drives
• Power factor correction circuits

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix RFBR against the manufacturer's latest datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure compatibility with the LMG2652EVM-101 evaluation module if prototyping. Confirm moisture sensitivity level handling procedures during assembly to prevent package damage.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when a compact, high-efficiency solution for medium-power applications is required. The integrated nature reduces external component count compared to discrete solutions. Consider the 140 milliohm on-resistance for conduction loss calculations. Verify that the 19-VQFN thermal performance meets your heat dissipation needs without excessive heatsinking.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the LMG2652 family of integrated GaN power switches from Texas Instruments. These devices are designed to replace traditional silicon MOSFETs and separate gate drivers in power conversion stages. The family offers varying on-resistance options to balance efficiency and cost for different power levels.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Check for LMG2652 variants with different on-resistance ratings or packaging options if current availability is limited. Ensure any substitute maintains the same 650V rating and VQFN-19 footprint for direct board replacement.