LMG3411R150RWHT

LMG3411R150RWHT

$11.93
  • Description:SMART 150MOHM GAN FET WITH DRIVE
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:02a546d7bfb0 Category: Brand:

  
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Product Detailed Parameters

  • Description:SMART 150MOHM GAN FET WITH DRIVE
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Type:Load Switch
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:High Side
  • Output Type:N-Channel
  • Interface:Logic, PWM
  • Voltage - Load:480V (Max)
  • Voltage - Supply (Vcc/Vdd):9.5V ~ 18V
  • Current - Output (Max):6A
  • Rds On (Typ):150mOhm
  • Input Type:Non-Inverting
  • Features:Bootstrap Circuit, 5V Regulated Output
  • Fault Protection:Over Current, Over Temperature, UVLO
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:32-VQFN (8x8)
  • Package / Case:32-VQFN Exposed Pad
  • Grade:-
  • Qualification:-

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LMG3411R150RWHT

Overview

The LMG3411R150RWHT is a half-bridge gate driver integrating a 600-V, 150-mΩ GaN FET with a dedicated CMOS driver in a VQFN-32 package. It operates with a supply voltage range of 9.5 V to 18 V and delivers a peak output current of 12 A. The device features non-inverting logic input and supports cut tape, reel, and MouseReel packaging. Key electrical parameters include a rise time of 2.9 ns, fall time of 26 ns, maximum turn-on delay of 12 ns, and maximum turn-off delay of 10 ns. It functions within a temperature range of -40°C to +125°C.

Feature Summary

  • Integrates a 600-V GaN power switch with an optimized gate driver for high-speed switching applications.
  • Provides robust protection mechanisms including cycle-by-cycle overcurrent protection, thermal shutdown, and under-voltage lockout.
  • Features a bootstrap circuit and a 5-V regulated output to simplify external biasing requirements.

Applications

  • High-frequency DC-DC converters
  • Class-D audio amplifiers
  • Industrial motor drives

Procurement Notes

Verify the specific suffix (RWHT vs RWHR) to confirm the correct packaging format required for your assembly line. Ensure compatibility with the LMG3411EVM-031 development kit if prototyping. Confirm moisture sensitivity levels and reflow soldering profiles prior to manufacturing integration.

Selection Notes

Select this component when a compact solution combining a 600-V GaN switch and driver is required. The 150-mΩ on-resistance offers a balance between conduction losses and switching speed. Consider the VQFN-32 footprint constraints and thermal management needs for the intended application environment.

Part Context

This part belongs to the Texas Instruments LMG341x family of integrated GaN FETs with drivers. It shares architectural similarities with the LMG3410 series but differs in internal resistance ratings. The R150 designation specifically indicates the 150-mΩ on-state resistance characteristic of this variant.

Replacement Considerations

LMG3411R150RWHR serves as the identical functional alternative differing only in packaging configuration.

LMG3411R150RWHTLMG3411R150RWHT
$11.93
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