LMG3422R030RQZR

$10.84

Description：600-V 30-M GAN FET WITH INTEGRAT
Series：-
Mfr：Texas Instruments
Package：Tape & Reel (TR)

SKU:ff051e0e6871 Category: Power Distribution Switches, Load Drivers Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：600-V 30-M GAN FET WITH INTEGRAT
Series：-
Mfr：Texas Instruments
Package：Tape & Reel (TR)
Switch Type：General Purpose
Number of Outputs：1
Ratio - Input:Output：1:01
Output Configuration：Low Side
Output Type：N/P-Channel
Interface：PWM
Voltage - Load：600V
Voltage - Supply (Vcc/Vdd)：7.5V ~ 18V
Current - Output (Max)：40A
Rds On (Typ)：26mOhm
Input Type：Non-Inverting
Features：Slew Rate Controlled, Status Flag
Fault Protection：Current Limiting (Fixed), Over Temperature, UVLO
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Supplier Device Package：54-VQFN (12x12)
Package / Case：54-VQFN Exposed Pad
Grade：-
Qualification：-

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LMG3422R030RQZR

Overview

The LMG3422R030RQZR is a 600-V gallium nitride (GaN) field-effect transistor with an integrated gate driver, protection circuitry, and temperature reporting. It features a 30-mΩ on-resistance and operates within a supply voltage range of 7.5 V to 18 V. The device supports inverting and non-inverting configurations and is housed in a 54-pin VQFN package. It is qualified under AEC-Q100 standards for automotive applications and functions reliably across a junction temperature range of -40°C to 125°C.

Feature Summary

Integrates a 600-V GaN FET with a dedicated gate driver and comprehensive protection mechanisms.
Includes built-in temperature reporting capabilities for thermal monitoring.
Automotive-grade qualification ensures reliability for demanding environments.

Applications

Automotive power conversion systems
High-efficiency DC-DC converters
On-board charger modules

Procurement Notes

Verify the specific suffix RQZR confirms AEC-Q100 automotive qualification status. Ensure the ordering part number matches the required package variant and tape-and-reel specifications. Cross-reference the manufacturer's latest datasheet revision to confirm pinout compatibility and electrical characteristics before integration into final designs.

Selection Notes

Select this component when designing high-density power stages requiring integrated GaN switching and control. The inclusion of temperature reporting simplifies thermal management strategies. Consider the 54-pin VQFN footprint for PCB layout constraints. Evaluate the 30-mΩ resistance against efficiency requirements at target load currents.

Part Context

This device belongs to the LMG342xR030 family of integrated GaN power stages from Texas Instruments. It combines wide-bandgap semiconductor technology with advanced driver logic to reduce system complexity. The family targets applications where size, weight, and efficiency are critical performance metrics.

Replacement Considerations

LMG3422R030RQZT is a listed similar part number within the same product family. Verify package type and qualification status differences before substitution.