LMG3422R030RQZT

Overview

The LMG3422R030RQZT is a 600-V gallium nitride (GaN) field-effect transistor with an integrated gate driver, protection circuitry, and temperature reporting. It features a 30-mΩ on-resistance and operates within a -40°C to 125°C junction temperature range. The device utilizes a 54-pin VQFN package. It supports supply voltages from 7.5 V to 18 V and offers inverting and non-inverting configurations.

Feature Summary

• Integrates a 600-V GaN FET with a dedicated gate driver for compact power stage design
• Includes built-in protection mechanisms and real-time temperature monitoring capabilities
• Supports both inverting and non-inverting input signal configurations

Applications

• High-efficiency DC-DC converters
• Server and data center power supplies
• Industrial motor drives
• Uninterruptible power systems

Procurement Notes

Verify the specific suffix RQZT against official Texas Instruments documentation to confirm the exact tape-and-reel packaging configuration and moisture sensitivity level. Ensure that the automotive qualification requirements align with the intended application environment before finalizing procurement orders.

Selection Notes

Select this component when a monolithic solution combining high-voltage GaN switching and control logic is required. The integrated nature reduces external component count and parasitic inductance. Consider the thermal performance of the QFN12x12 package for heat dissipation needs in high-power density designs.

Part Context

This part belongs to the LMG3422 family of integrated GaN power stages. It differs from discrete GaN FETs by embedding the driver directly onto the die. This integration simplifies layout constraints and improves switching speed compared to traditional silicon-based half-bridge solutions requiring separate driver ICs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.