LMG3422R050RQZR

Overview

The LMG3422R050RQZR is a 600-V, 50-mΩ Gallium Nitride (GaN) field-effect transistor with an integrated gate driver. It features a half-bridge configuration in a VQFN-54 package. The device operates with a supply voltage range of 7.5 V to 18 V and supports non-inverting control. Key electrical parameters include a rise time of 2.5 ns and a fall time of 21 ns. It functions within a temperature range of -40°C to +125°C.

Feature Summary

• Integrated 600-V GaN FET with low on-resistance
• Built-in high-speed gate driver for fast switching
• On-chip protection mechanisms for reliability
• Temperature reporting capability for thermal management

Applications

• High-frequency power conversion systems
• Server and data center power supplies
• Industrial motor drives
• Solar microinverters

Procurement Notes

Verify the specific suffix RQZR indicates tape and reel packaging when ordering. Confirm RoHS compliance status through official Texas Instruments documentation prior to procurement. Ensure the component matches the required automotive or industrial qualification standards if applicable to the design. Cross-reference the datasheet revision date to ensure compatibility with latest design guidelines.

Selection Notes

Select this component for designs requiring high power density and efficiency in the 600-V class. The integrated driver simplifies layout by minimizing parasitic inductance compared to discrete solutions. Consider the VQFN-54 package for its thermal performance and pin count relative to smaller packages. Evaluate the need for external protection components based on system-level requirements despite internal safeguards.

Part Context

This part belongs to the LMG342xR050 family of monolithic GaN power stages from Texas Instruments. These devices combine the power switch and driver on a single die to optimize performance. The family includes variants with different resistance values and package options. This specific model offers a balance of low conduction loss and fast switching speeds suitable for modern power electronics.

Replacement Considerations

Direct substitutes may include other LMG3422 variants with different suffixes indicating packaging changes. Verify pinout compatibility before replacing with similar GaN FETs from other manufacturers. Check if alternative parts offer equivalent thermal characteristics and drive strength.