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LMG3422R050RQZT
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Product Detailed Parameters
- Description：IC HALF BRIDGE DRVR 1.2A 54VQFN
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：Low Side
- Output Type：N/P-Channel
- Interface：PWM
- Voltage - Load：600V
- Voltage - Supply (Vcc/Vdd)：7.5V ~ 18V
- Current - Output (Max)：32A
- Rds On (Typ)：43mOhm
- Input Type：Non-Inverting
- Features：Slew Rate Controlled, Status Flag
- Fault Protection：Current Limiting (Fixed), Over Temperature, UVLO
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Supplier Device Package：54-VQFN (12x12)
- Package / Case：54-VQFN Exposed Pad
- Grade：-
- Qualification：-
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Overview
The LMG3422R050RQZT is a 600-V, 50-mΩ Gallium Nitride (GaN) field-effect transistor with an integrated gate driver. It operates within a supply voltage range of 7.5 V to 18 V and supports non-inverting configurations. The device features fast switching characteristics, including a rise time of 2.5 ns and a fall time of 21 ns. It functions reliably across a temperature range from -40°C to +125°C and is housed in a VQFN-54 package.
Feature Summary
- Integrates a 600-V GaN FET with a dedicated high-side and low-side gate driver for simplified half-bridge designs.
- Provides built-in protection mechanisms and temperature reporting capabilities for enhanced system reliability.
- Delivers rapid switching performance with nanosecond-scale rise and fall times to support high-frequency operation.
Applications
- High-efficiency DC-DC converters
- Motor drive systems
- Industrial power supplies
Procurement Notes
Verify the specific suffix RQZT against official Texas Instruments documentation to confirm the reel packaging configuration. Ensure compatibility with the intended PCB footprint and thermal management requirements before finalizing procurement decisions.
Selection Notes
Select this component when a compact solution combining a 600-V GaN switch and its driver is required. Consider the VQFN-54 package constraints and the 7.5 V to 18 V operating window. Evaluate thermal dissipation needs given the integrated nature of the driver and FET.
Part Context
This part belongs to the LMG342xR050 series, which integrates protection and temperature reporting features. It is designed to replace discrete MOSFET and driver combinations in space-constrained applications requiring high efficiency and fast switching speeds.
Replacement Considerations
LMG3422R050RWHR
FAQ
What is the maximum drain-source voltage rating?
The maximum drain-source voltage rating is 600 V.
Does the device include overcurrent protection?
Yes, the device includes integrated protection features as documented in the datasheet.
