LMG3425R030RQZR

Overview

The LMG3425R030RQZR is a half-bridge gate driver integrating a 600-V, 30-mΩ GaN FET. It operates with supply voltages from 7.5 V to 18 V and supports inverting or non-inverting configurations. The device features a VQFN-54 package and functions within a temperature range of -40°C to +125°C.

Feature Summary

• Integrates a 600-V, 30-mΩ GaN FET with an optimized gate driver for high-frequency switching applications.
• Supports both inverting and non-inverting logic input configurations for flexible system design.
• Designed for automotive reliability with AEC-Q101 qualification.

Applications

• Automotive powertrain and battery management systems
• Industrial motor drives and inverters
• High-efficiency DC-DC converters

Procurement Notes

Verify the specific suffix RQZR against official Texas Instruments documentation to confirm pinout and packaging details. Ensure compatibility with automotive environmental standards if deployed in vehicle systems. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and current production status before procurement.

Selection Notes

Select this component when a compact solution combining a 600-V GaN switch and its driver is required. The integrated nature reduces board space compared to discrete solutions. Consider the 30-mΩ on-resistance for efficiency targets and verify that the 7.5-V to 18-V supply range matches the system's available voltage rails.

Part Context

This part belongs to the LMG3425R series of integrated GaN FETs with gate drivers from Texas Instruments. These devices are designed to simplify the implementation of high-power density converters by combining the power stage and control logic into a single package.

Replacement Considerations

Publicly confirmed substitute part numbers for LMG3425R030RQZR are not available in the provided source material.