LMG3425R030RQZT

Overview

The LMG3425R030RQZT is a 600-V gallium nitride (GaN) field-effect transistor integrated with an optimized gate driver, protection circuitry, temperature reporting, and ideal diode mode functionality. It operates within a supply voltage range of 7.5 V to 18 V and supports both inverting and non-inverting configurations. The device features a rise time of 2.5 ns and a fall time of 21 ns. It is housed in a 54-pin VQFN package and functions reliably across an operating temperature range from -40°C to +125°C.

Feature Summary

• Integrates a 600-V GaN FET with a dedicated gate driver for high-speed switching performance.
• Includes built-in protection mechanisms and temperature reporting capabilities for system monitoring.
• Supports ideal diode mode operation to enhance efficiency in power conversion applications.

Applications

• High-frequency power conversion systems
• Automotive power electronics
• Industrial motor drives

Procurement Notes

Verify the specific suffix RQZT against official Texas Instruments documentation to confirm the exact package variant and tape-and-reel specifications. Ensure that the ordering information matches the required automotive qualification standards and thermal performance requirements for the intended application environment.

Selection Notes

Select this component when a compact solution combining a 600-V GaN switch with integrated control logic is required. Consider the 54-pin VQFN footprint for layout constraints and verify compatibility with the 7.5 V to 18 V driver supply range. Evaluate the thermal characteristics of the QFN12x12 package for heat dissipation needs.

Part Context

This part belongs to the LMG3425R series of integrated GaN power stages from Texas Instruments. These devices are designed to simplify the design of high-efficiency power supplies by combining wide-bandgap semiconductor technology with advanced driver ICs in a single package.

Replacement Considerations

LMG3425R050RQZT