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Product Detailed Parameters
- Description:600-V 50-M GAN FET WITH INTEGRAT
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:N/P-Channel
- Interface:Logic, PWM
- Voltage - Load:0V ~ 600V
- Voltage - Supply (Vcc/Vdd):7.5V ~ 18V
- Current - Output (Max):32A
- Rds On (Typ):43mOhm
- Input Type:Non-Inverting
- Features:Slew Rate Controlled, Status Flag
- Fault Protection:Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:54-VQFN (12x12)
- Package / Case:54-VQFN Exposed Pad
- Grade:-
- Qualification:-
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Overview
The LMG3425R050RQZR is a half-bridge gate driver designed for Gallium Nitride (GaN) field-effect transistors. It integrates a 600-V, 50-mΩ GaN FET with an optimized driver circuit in a single package. The device operates with a supply voltage range of 7.5 V to 18 V and features non-inverting logic configuration. Key electrical parameters include a rise time of 2.5 ns and a fall time of 21 ns. It supports operation within a temperature range of -40°C to +125°C and utilizes a VQFN-54 surface-mount package.
Feature Summary
- Integrates a 600-V, 50-mΩ GaN FET with dedicated gate drive circuitry
- Optimized for high-speed switching applications with minimal propagation delay
- Supports wide input supply voltage ranges for flexible system design
Applications
- High-frequency power conversion systems
- Server and data center power supplies
- Industrial motor drives
- Electric vehicle charging infrastructure
Procurement Notes
Verify the specific suffix RQZR corresponds to the reel packaging format when ordering. Confirm that the component meets automotive qualification standards if required for the target application. Ensure compatibility with the VQFN-54 footprint during PCB layout. Check for RoHS compliance status prior to final procurement decisions.
Selection Notes
Select this component when a monolithic solution combining a high-voltage GaN switch and its driver is preferred over discrete designs. Consider the integrated parasitic inductance benefits compared to separate components. Evaluate the thermal performance requirements relative to the VQFN-54 package size. Assess the need for automotive-grade reliability versus standard industrial specifications.
Part Context
This part belongs to the LMG3425R050 series of integrated GaN power stages from Texas Instruments. The series focuses on simplifying power stage design by combining the switch and driver. The RQZR variant specifically denotes the tape-and-reel packaging option suitable for automated assembly processes.
Replacement Considerations
LMG3425R050RQZT is a compatible alternative offering identical electrical characteristics but packaged in cut-tape format instead of reel.
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