LMG3425R050RQZT

Overview

The LMG3425R050RQZT is a half-bridge gate driver from Texas Instruments designed for Gallium Nitride (GaN) power transistors. It integrates high-side and low-side drivers with a 600-V, 50-mΩ GaN FET in a VQFN-54 package. The device operates on a supply voltage range of 7.5 V to 18 V. Key electrical parameters include a non-inverting configuration, a rise time of 2.5 ns, and a fall time of 21 ns. It supports an operating temperature range from -40°C to +125°C.

Feature Summary

• Integrates a 600-V, 50-mΩ GaN FET with dedicated high-side and low-side gate drivers
• Features fast switching characteristics with a 2.5 ns rise time
• Supports wide input supply voltages ranging from 7.5 V to 18 V

Applications

• High-frequency DC-DC converters
• Motor drive systems
• Industrial power supplies

Procurement Notes

Verify the specific suffix RQZT to confirm the VQFN-54 package and reel/cut tape availability. Ensure compatibility with 600-V GaN devices requiring integrated driving capabilities. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring integrated GaN power stages with minimal external components. The VQFN-54 package offers a compact footprint suitable for space-constrained applications. Consider the 2.5 ns rise time for high-speed switching requirements and the 18 V maximum supply voltage for robust driver operation.

Part Context

This part belongs to the LMG3425R050 series of GaN-based gate drivers. It combines power switching and control logic into a single monolithic solution. The integration reduces board space and simplifies layout compared to discrete driver and FET combinations.

Replacement Considerations

Check for other variants within the LMG3425R050 family that may offer different packaging or thermal options. Verify pinout compatibility if substituting with similar integrated GaN drivers from other manufacturers.