LMG3426R030RQZR

Overview

The LMG3426R030RQZR is a 600V Gallium Nitride (GaN) field-effect transistor with an integrated driver, protection circuitry, and zero-voltage detection. It features a 30mΩ on-resistance and supports up to 40A current in a 54-pin VQFN (12x12mm) package. The device operates within a temperature range of -40°C to 125°C.

Feature Summary

• Integrated high-precision gate bias for optimized switching performance
• Qualified for JEDEC JEP180 hard-switching topologies
• Built-in protection mechanisms including over-current and thermal reporting

Applications

• Hard-switching power conversion topologies
• High-efficiency DC-DC converters
• Industrial motor drives

Procurement Notes

Verify the specific ordering suffix RQZ confirms the 54-pin VQFN package and industrial temperature grade. Ensure compatibility with existing PCB footprints designed for the 12x12mm outline. Confirm that the integrated driver requirements match the system's logic voltage levels before procurement.

Selection Notes

Select this component for applications requiring high power density and reduced external component count due to the integrated driver. The 600V rating suits medium-voltage systems. Consider the thermal management capabilities of the VQFN package for high-power dissipation scenarios.

Part Context

This part belongs to the LMG342xR030 family of GaN FETs from Texas Instruments. These devices combine a 600V GaN-on-Si FET with an integrated gate driver and protection features to simplify design and improve efficiency in power electronics applications.

Replacement Considerations

Check for direct substitutes within the LMG342x series with compatible pinouts and electrical characteristics. Verify that any replacement maintains the same integration level and qualification status for hard-switching applications.