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Product Detailed Parameters
- Description:600V 50M GAN FET WITH INTEGRATED
- Series:-
- Mfr:Texas Instruments
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:Low Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:600V
- Voltage - Supply (Vcc/Vdd):7.5V ~ 18V
- Current - Output (Max):40A
- Rds On (Typ):26mOhm
- Input Type:Non-Inverting
- Features:Slew Rate Controlled, Status Flag
- Fault Protection:Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Surface Mount
- Supplier Device Package:54-VQFN (12x12)
- Package / Case:54-VQFN Exposed Pad
- Grade:-
- Qualification:-
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Overview
The LMG3426R030RQZT is a 600V Gallium Nitride (GaN) Field-Effect Transistor with an integrated gate driver, protection circuitry, and temperature reporting. It features a low on-resistance of 30mΩ and is housed in a 54-pin VQFN package. The device includes high-precision gate bias control and zero-voltage detection capabilities. It is designed for hard-switching topologies and meets JEDEC JEP180 qualification standards.
Feature Summary
- Integrated high-precision gate bias control for optimized switching performance
- Built-in protection mechanisms including over-current and thermal monitoring
- Zero-voltage detection capability to support efficient soft-switching operations
- Qualified for hard-switching applications per JEDEC JEP180 standards
Applications
- Switch-mode power converters
- High-efficiency DC-DC conversion systems
- Industrial motor drives
- Server and data center power supplies
Procurement Notes
Verify the complete part number including the RQZT suffix to ensure correct packaging and reel specifications. Confirm that the component meets the required JEDEC qualification standards for your specific application environment. Check datasheet revisions for any updates to electrical characteristics or recommended operating conditions before finalizing procurement.
Selection Notes
Select this component when designing high-frequency, high-efficiency power stages requiring integrated GaN technology. Ensure the design supports the 600V rating and utilizes the integrated driver's capabilities. Consider the thermal management requirements associated with the VQFN package and the specific switching frequencies enabled by the low on-resistance.
Part Context
This device belongs to the LMG342xR030 family of GaN FETs from Texas Instruments. These components are engineered to simplify power supply design by integrating the power switch and driver into a single package. The family targets applications demanding high power density and efficiency through advanced semiconductor materials.
Replacement Considerations
Direct replacements within the same family include other variants of the LMG342xR030 series. Verify pin compatibility and electrical parameters such as voltage rating and on-resistance when considering alternative packages or updated revisions from the manufacturer.
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