LMG3426R050RQZR

Overview

The LMG3426R050RQZR is a monolithic Gallium Nitride (GaN) power switch integrating a 600V, 50mΩ N-channel GaN FET with an integrated gate driver. Packaged in a 54-pin VQFN (RQZ) format, it operates within a supply voltage range of 7.5V to 18V and supports junction temperatures from -40°C to +125°C. The device features non-inverting logic configuration with specified rise and fall times for high-speed switching applications.

Feature Summary

• Integrates a 600V rated GaN FET with a dedicated gate driver in a single monolithic package
• Includes built-in protection mechanisms and zero-voltage detection capabilities
• Designed for high-frequency operation with fast switching characteristics

Applications

• High-efficiency DC-DC converters
• Server and data center power supplies
• Industrial motor drives

Procurement Notes

Verify the specific suffix RQZR against the official Texas Instruments datasheet to confirm the tape-and-reel packaging and pinout configuration. Ensure compatibility with moisture sensitivity levels and reflow soldering profiles as defined in the manufacturing documentation before integration into production lines.

Selection Notes

Select this component when a compact solution combining high-voltage GaN switching with integrated drive and protection is required. It is suitable for designs prioritizing high power density and reduced bill-of-materials count by eliminating external discrete drivers and protection circuits.

Part Context

This part belongs to the LMG34xx series of integrated GaN power switches from Texas Instruments. These devices are engineered to simplify the design of high-performance power conversion systems by combining the efficiency of GaN technology with robust control features in a small form factor.

Replacement Considerations

Consult official substitution guides for compatible parts within the LMG34xx family or equivalent 600V GaN switches from other manufacturers, ensuring matching voltage ratings, current capabilities, and package dimensions.