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LMG3427R030RQZR
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Product Detailed Parameters
- Description：600V 30M GAN FET WITH INTEGRATED
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR)
- Switch Type：General Purpose
- Number of Outputs：1
- Ratio - Input:Output：1:01
- Output Configuration：High Side
- Output Type：P-Channel
- Interface：Logic, PWM
- Voltage - Load：-
- Voltage - Supply (Vcc/Vdd)：7.5V ~ 18V
- Current - Output (Max)：-
- Rds On (Typ)：26mOhm
- Input Type：CMOS
- Features：PWM Input
- Fault Protection：Over Current, Short Circuit, UVLO
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Surface Mount
- Supplier Device Package：54-VQFN (12x12)
- Package / Case：54-VQFN Exposed Pad
- Grade：-
- Qualification：-
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Overview
The LMG3427R030RQZR is a 600V Gallium Nitride (GaN) field-effect transistor with an integrated driver, protection circuitry, and zero-current detection. It features a low on-resistance of 30mΩ and operates within a temperature range of -40°C to 125°C. The device is housed in a 54-pin VQFN (RQZ) package with an exposed pad, designed for high-efficiency power conversion applications requiring compact form factors and robust performance.
Feature Summary
- Integrated gate driver and protection mechanisms for simplified design
- Zero-current detection capability for enhanced switching efficiency
- High-voltage 600V rating suitable for industrial and automotive systems
Applications
- Industrial motor drives
- Server and data center power supplies
- Automotive charging systems
Procurement Notes
Verify the specific ordering suffix RQZ to confirm the 54-pin VQFN package configuration. Ensure compatibility with thermal management requirements due to the exposed pad design. Confirm that the -40°C to 125°C operating range meets your application's environmental specifications before procurement.
Selection Notes
Select this component when a monolithic GaN solution with integrated control is required. The 30mΩ on-resistance offers a balance between conduction losses and switching speed. Consider the VQFN package for space-constrained designs where thermal dissipation through the exposed pad is feasible.
Part Context
This part belongs to the LMG342x family of integrated GaN FETs from Texas Instruments. These devices combine high-voltage GaN transistors with advanced driver logic to reduce system complexity. The LMG3427 variant specifically includes zero-current detection, distinguishing it from other members of the series that may lack this feature.
Replacement Considerations
Check for direct substitutes within the LMG342x family, such as the LMG3422R030RQZR, noting differences in integrated features like zero-current detection. Verify pinout compatibility and thermal characteristics before substituting.
