LMG3522R050RQSR

Overview

The LMG3522R050RQSR is a 650V Gallium Nitride (GaN) power stage integrating a GaN FET and a silicon driver, designed for high-frequency switching applications. It features an integrated precision gate bias and adjustable slew rate control ranging from 15V/ns to 150V/ns, enabling optimized switching performance and EMI mitigation. The device supports switching frequencies up to 3.6MHz and operates with supply voltages between 7.5V and 18V. Advanced protection mechanisms include cycle-by-cycle overcurrent protection with response times under 100ns, latch-up short-circuit protection, and digital temperature reporting via PWM output. The component utilizes a top-cooled 12mm x 12mm VQFN package to separate electrical and thermal paths, minimizing power loop inductance.

Feature Summary

• Integrated direct-drive architecture combining a 650V GaN FET with a silicon driver for enhanced switching speed and safety operating area.

Applications

• Switched-mode power supply converters
• High-density power conversion systems

Procurement Notes

Verify the specific suffix 'RQSR' against official Texas Instruments documentation to confirm automotive qualification status and reel packaging specifications. Ensure compatibility with required operating voltage ranges and thermal management solutions before integration. Cross-reference the exact part number with current datasheets to validate any recent design changes or obsolescence notices.

Selection Notes

Select this component for designs requiring high power density and efficiency through elevated switching frequencies. The adjustable slew rate allows designers to balance switching losses against electromagnetic interference requirements. Consider the integrated protection features and digital temperature monitoring capabilities when designing robust power stages that require simplified fault handling and thermal management without external complex circuitry.

Part Context

This device belongs to the LMG352xR050 family of integrated GaN power stages from Texas Instruments. These components are engineered to replace traditional discrete silicon MOSFET and gate driver combinations, offering superior performance in terms of switching speed and system footprint. The family leverages low-inductance packaging technologies to support hard-switching topologies with minimal ringing.

Replacement Considerations

Direct substitutes within the same family include the LMG3522R050RHSR. Verify pinout and thermal characteristics when considering alternative packages or non-automotive qualified versions.