LMG3526R050RQSR

Overview

The LMG3526R050RQSR is a 650-V, 50-mΩ Gallium Nitride (GaN) field-effect transistor with an integrated silicon gate driver. It operates within a -40°C to 125°C temperature range in a top-cooled 12mm × 12mm VQFN package. The device supports switching frequencies up to 3.6 MHz and offers adjustable slew rates between 15 V/ns and 150 V/ns. It features integrated protection mechanisms including over-current, short-circuit, and thermal monitoring, alongside zero-voltage detection capabilities for soft-switching applications.

Feature Summary

• Integrated high-precision gate bias voltage and direct drive architecture for optimized switching performance
• Adjustable slew rate control from 15 V/ns to 150 V/ns to manage electromagnetic interference
• Advanced protection suite including cycle-by-cycle over-current, latch-up short-circuit, and UVLO monitoring
• Digital temperature reporting via PWM output and zero-voltage detection for resonant converter efficiency

Applications

• High-efficiency switch-mode power supply converters
• Soft-switching resonant converter topologies requiring zero-voltage switching
• Applications demanding high power density and reduced component count
• Industrial and automotive power conversion systems operating at elevated temperatures

Procurement Notes

Verify the specific ordering suffix RQS confirms the VQFN package type and top-cooled thermal pad configuration. Ensure the design accounts for the required negative gate bias generation if utilizing the full hold-off capability. Confirm that the PCB layout supports the low-inductance requirements of the 12mm x 12mm footprint to maintain the specified switching performance and thermal integrity.

Selection Notes

Select this component when designing for high-frequency operation above 1 MHz where traditional silicon MOSFETs face efficiency limitations. The integrated driver simplifies bill of materials by removing external gate drive components. Consider the adjustable slew rate feature if strict EMI regulations must be met without sacrificing switching speed. The top-cooled package is essential for thermal management in compact, high-power-density enclosures.

Part Context

This part belongs to Texas Instruments' LMG352xR050 family of GaN-on-Si power switches. These devices combine a 650-V GaN FET with a dedicated silicon driver on a single die. The family focuses on reducing system complexity and size by integrating protection and control logic directly with the power stage, enabling higher switching frequencies than conventional discrete solutions.

Replacement Considerations

Direct replacements within the same family include other variants of the LMG352xR050 series. Verify pin compatibility and thermal characteristics when substituting. Note that different ordering suffixes may indicate variations in packaging or reel specifications rather than functional differences.