LMG3526R050RQST

Overview

The LMG3526R050RQST is a 650-V, 50-mΩ Gallium Nitride (GaN) field-effect transistor with an integrated silicon driver. It operates within a junction temperature range of -40°C to 150°C and utilizes a 12mm × 12mm VQFN package. The device supports switching frequencies up to 3.6MHz and offers adjustable slew rates between 15V/ns and 150V/ns. It features overcurrent protection with response times under 100ns, withstands 720V surges in hard-switching topologies, and includes digital temperature reporting via PWM output.

Feature Summary

• Integrated high-precision gate bias voltage for enhanced switching safety area operation
• Adjustable gate drive strength allows active electromagnetic interference control
• Advanced protection mechanisms include latch-on short-circuit and overcurrent detection
• Zero-voltage detection capability facilitates soft-switching converter implementations

Applications

• High-efficiency switch-mode power supply converters
• Hard-switching topologies requiring low ringing
• Soft-switching converters utilizing zero-voltage switching
• Applications demanding high power density and efficiency

Procurement Notes

Verify the specific ordering suffix RQS to confirm the package type and reel configuration. Ensure compatibility with the required operating temperature range of -40°C to 150°C. Confirm that the design accommodates the exposed pad thermal requirements of the VQFN package. Validate that the system voltage does not exceed the 650-V rating during transient conditions.

Selection Notes

Select this component when integrating a GaN FET with a dedicated driver is preferred over discrete solutions. It is suitable for designs requiring precise control over switching speed to balance efficiency and EMI. Consider its robust protection features for applications prone to fault conditions. Evaluate the thermal management needs associated with the 12mm × 12mm package footprint.

Part Context

This part belongs to Texas Instruments' LMG352x series of direct-drive GaN FETs. Unlike cascode structures, it uses a negative voltage for turn-off, reducing gate charge and eliminating avalanche risks. The series integrates protection and sensing functions directly on the silicon die, simplifying the external circuit design compared to traditional discrete GaN implementations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical specifications against any potential alternative devices before implementation.