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LMG5200MOFR is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC HALF BRIDGE DRIVER 10A 9QFN. Review the specifications below when checking this part for your BOM.
The LMG5200MOFR is an 80-V, 10-A Gallium Nitride (GaN) Half-Bridge Power Stage manufactured by Texas Instruments. It integrates high-side and low-side enhancement-mode GaN transistors with gate drivers into a single compact package. The device operates within a supply voltage range of 4.75 V to 10.5 V for the driver section and supports input voltages up to 80 V. Key electrical characteristics include a typical on-resistance of 35 mΩ per switch and a maximum switching frequency capability significantly exceeding traditional silicon MOSFETs. The component is housed in a thermally enhanced MOFR (PowerPAD™) package designed for efficient heat dissipation in high-density power conversion applications.
Verify the specific suffix MOFR corresponds to the tape-and-reel packaging configuration when ordering. Confirm that the procurement source provides genuine Texas Instruments components to ensure reliability. Check for any recent product change notifications or lifecycle status updates directly from the manufacturer before finalizing purchase orders.
Select this component when designing systems requiring high power density and switching frequencies beyond the capabilities of standard silicon MOSFETs. Ensure the PCB layout supports the thermal requirements of the MOFR package. Verify that the control logic levels are compatible with the integrated gate driver inputs. Consider the 80-V rating relative to the system's maximum bus voltage to maintain adequate safety margins.
The LMG5200 belongs to Texas Instruments' family of integrated GaN power stages. It represents a shift towards monolithic integration of wide-bandgap semiconductors, reducing external component count compared to discrete solutions. This series targets applications where size, weight, and efficiency are critical constraints, leveraging the superior switching speed of GaN technology.
Direct pin-to-pin replacements may be limited due to the specific integration of GaN devices. Evaluate alternative GaN half-bridge ICs from Texas Instruments or other manufacturers based on voltage ratings, current capacity, and package dimensions. Ensure any substitute maintains compatibility with existing gate drive signals and thermal management designs.
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