Full Half-Bridge (H Bridge) Drivers LMG5200MOFR product image

LMG5200MOFR

$10.76
  • Description:IC HALF BRIDGE DRIVER 10A 9QFN
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fed3f2e27d3b Category: Brand:

  
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LMG5200MOFR is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC HALF BRIDGE DRIVER 10A 9QFN. Review the specifications below when checking this part for your BOM.

Full Half-Bridge (H Bridge) Drivers specifications for LMG5200MOFR

  • Description:IC HALF BRIDGE DRIVER 10A 9QFN
  • Series:-
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Output Configuration:Half Bridge
  • Applications:Synchronous Buck Converters
  • Interface:Logic
  • Load Type:Inductive
  • Technology:Gallium Nitride (GaN) FETs
  • Rds On (Typ):15mOhm LS, 15mOhm HS
  • Current - Output / Channel:10A
  • Current - Peak Output:-
  • Voltage - Supply:4.75V ~ 5.25V
  • Voltage - Load:80V
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Features:Bootstrap Circuit
  • Fault Protection:UVLO
  • Mounting Type:Surface Mount
  • Package / Case:9-QFN
  • Supplier Device Package:9-QFN (8x6)
  • Grade:-
  • Qualification:-

Full Half-Bridge (H Bridge) Drivers datasheet and documents for LMG5200MOFR

LMG5200MOFR

Full Half-Bridge (H Bridge) Drivers Overview

The LMG5200MOFR is an 80-V, 10-A Gallium Nitride (GaN) Half-Bridge Power Stage manufactured by Texas Instruments. It integrates high-side and low-side enhancement-mode GaN transistors with gate drivers into a single compact package. The device operates within a supply voltage range of 4.75 V to 10.5 V for the driver section and supports input voltages up to 80 V. Key electrical characteristics include a typical on-resistance of 35 mΩ per switch and a maximum switching frequency capability significantly exceeding traditional silicon MOSFETs. The component is housed in a thermally enhanced MOFR (PowerPAD™) package designed for efficient heat dissipation in high-density power conversion applications.

Full Half-Bridge (H Bridge) Drivers Feature Summary

  • Integrates dual enhancement-mode GaN transistors with optimized gate drivers for simplified design
  • Provides inherent shoot-through protection and adjustable dead-time control
  • Features low on-resistance for improved efficiency and reduced conduction losses
  • Utilizes a compact, thermally efficient surface-mount package

Full Half-Bridge (H Bridge) Drivers Applications

  • High-frequency DC-DC converters
  • Point-of-load (POL) regulation modules
  • Class-D audio amplifier output stages
  • Industrial motor drives

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix MOFR corresponds to the tape-and-reel packaging configuration when ordering. Confirm that the procurement source provides genuine Texas Instruments components to ensure reliability. Check for any recent product change notifications or lifecycle status updates directly from the manufacturer before finalizing purchase orders.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component when designing systems requiring high power density and switching frequencies beyond the capabilities of standard silicon MOSFETs. Ensure the PCB layout supports the thermal requirements of the MOFR package. Verify that the control logic levels are compatible with the integrated gate driver inputs. Consider the 80-V rating relative to the system's maximum bus voltage to maintain adequate safety margins.

Full Half-Bridge (H Bridge) Drivers Part Context

The LMG5200 belongs to Texas Instruments' family of integrated GaN power stages. It represents a shift towards monolithic integration of wide-bandgap semiconductors, reducing external component count compared to discrete solutions. This series targets applications where size, weight, and efficiency are critical constraints, leveraging the superior switching speed of GaN technology.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Direct pin-to-pin replacements may be limited due to the specific integration of GaN devices. Evaluate alternative GaN half-bridge ICs from Texas Instruments or other manufacturers based on voltage ratings, current capacity, and package dimensions. Ensure any substitute maintains compatibility with existing gate drive signals and thermal management designs.

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