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Product Detailed Parameters
- Description：JFET 2N-CH 25V 8SOIC
- Series：LS5911
- Mfr：Linear Integrated Systems, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The LS5911 is a monolithic dual N-channel JFET amplifier in an SOIC-8 package. It features low noise with equivalent input voltage of 4 nV/√Hz at 10kHz and high transconductance (gfs) of 4000µS to 10000µS at 1kHz. Gate-to-source breakdown voltage is -25V, with saturation current (IDSS) ranging from 7mA to 40mA. Operating junction temperature spans -55°C to +150°C, and continuous power dissipation is 500mW.
Feature Summary
- Monolithic dual N-channel JFET architecture providing matched electrical characteristics for differential applications
- Low noise performance with specified equivalent input noise voltage of 4 nV/√Hz at 10kHz
- High forward transconductance capability exceeding 4000µS at 1kHz for wideband signal amplification
- Wide operating temperature range supporting industrial environments up to +150°C junction temperature
Applications
- Precision instrumentation front-end amplifiers requiring low noise and high linearity
- Differential signal processing circuits utilizing matched JFET pairs
- Wideband analog signal conditioning systems
Procurement Notes
Verify the specific suffix 'A' against official Linear Integrated Systems documentation to confirm pinout configuration and package variant. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference datasheet revision A9 for accurate electrical limits before finalizing procurement specifications.
Selection Notes
Select this component when low noise and high transconductance are critical for dual JFET applications. The LS5911 serves as an improved replacement for legacy discrete JFETs like the 2N5911. Consider the SOIC-8 package for surface mount assembly needs. Verify that the -25V gate-to-source breakdown voltage aligns with your circuit's maximum signal swings.
Part Context
Linear Integrated Systems manufactures precision semiconductor components, leveraging expertise from companies such as Intersil and Union Carbide. The LS5911 belongs to a family including LS5912 variants, designed to replace older discrete JFET solutions. The company focuses on high-quality discrete components and integrated circuits for demanding analog applications.
Replacement Considerations
Officially documented as an improved replacement for SILICONIX, FAIRCHILD, and NATIONAL 2N5911 and 2N5912 devices. Verify pin compatibility and electrical parameter overlaps before substitution.
