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Product Detailed Parameters
- Description：JFET 2N-CH 25V TO78-6
- Series：LS5911
- Mfr：Linear Integrated Systems, Inc.
- Package：Bulk
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：-
- Qualification：-
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Overview
The LS5911 is a monolithic dual N-channel JFET amplifier designed as an improved replacement for legacy discrete devices. It features low noise with equivalent input voltage of 4 nV/√Hz at 10kHz and high transconductance of 4000µS to 10000µS at 1kHz. The device operates within a junction temperature range of -55°C to +150°C, supporting continuous power dissipation up to 500mW. Key electrical characteristics include a gate-to-source breakdown voltage of -25V and saturation current ranging from 7mA to 40mA.
Feature Summary
- Monolithic dual N-channel JFET architecture providing integrated circuit reliability
- Low noise performance suitable for precision analog signal processing
- High transconductance capability for wideband amplification applications
- Enhanced matching characteristics including common mode rejection ratio
Applications
- Precision instrumentation front-ends
- Low noise audio preamplifiers
- Wideband signal conditioning circuits
- High impedance sensor interfaces
Procurement Notes
Verify the specific package type against the datasheet diagrams, as the LS5911 is available in multiple configurations including SOT-23, PDIP-A, PDIP-B, SOIC-A, and SOIC-B. Confirm that the ordering suffix corresponds to the required physical footprint and pinout arrangement. Ensure compliance with RoHS standards if applicable to the procurement requirements. Cross-reference the manufacturer's documentation for any updates regarding availability or alternative package options.
Selection Notes
Select the LS5911 when superior noise performance and higher transconductance are required compared to standard discrete JFETs like the 2N5911. Consider the operating temperature range and power dissipation limits during thermal design. Evaluate the need for matched pairs by reviewing the differential cutoff voltage and transconductance ratio specifications. Choose the appropriate package variant based on board space constraints and mounting preferences.
Part Context
Linear Integrated Systems manufactures the LS5911 as part of a family including the LS5912 and LS5912C. These components serve as direct upgrades to older discrete JFET technologies from manufacturers such as Siliconix, Fairchild, and National Semiconductor. The product line emphasizes precision semiconductor manufacturing heritage derived from industry veterans.
Replacement Considerations
The LS5911 is documented as an improved replacement for the 2N5911 and 2N5912 discrete JFETs. Verify pin compatibility and electrical parameter superiority before substitution. No other specific substitute part numbers are listed in the provided documentation.
