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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 20SOIC
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side
- Channel Type:Independent
- Number of Drivers:4
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 48V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package:20-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LT1161ISW#TRPBF is a quad high-side gate driver manufactured by Analog Devices Inc., designed for switching low-cost N-channel power MOSFETs. It features four independent switch channels, each with a self-contained charge pump requiring no external components to fully enhance the MOSFET switches. The device operates within an input voltage range of 8 V to 48 V and supports a maximum input voltage of 60 V. It provides an output voltage of 12 V and draws a working supply current of 4.5 mA. The component is housed in a 20-pin SOIC-W package and functions within a temperature range of -40°C to +85°C.
Feature Summary
- Four independent high-side switch channels with integrated self-contained charge pumps
- Enables use of low-cost N-channel power MOSFETs without external boost components
- Includes overvoltage shutdown protection mechanisms
Applications
- High-side switching applications using N-channel power MOSFETs
- Automotive solenoid driving systems
- Industrial switch control circuits
Procurement Notes
Verify the specific suffix #TRPBF indicates tape-and-reel packaging when sourcing from distributors. Confirm that the ISW variant meets the required industrial temperature specifications compared to other family members. Ensure compatibility with the intended N-channel MOSFET gate requirements before finalizing procurement orders.
Selection Notes
Select this component when multiple isolated high-side switches are required in a compact form factor. The integrated charge pumps simplify design by eliminating external bootstrap capacitors. Consider the 48 V maximum operating voltage limit relative to the system's supply rails and ensure the SOIC-W package fits the available PCB footprint constraints.
Part Context
This part belongs to the LT1161 series of protected quad high-side MOSFET drivers. It shares functional similarities with variants like the LT1161CSW but differs in temperature rating and packaging configuration. The series is categorized under PMIC and Gate Drivers within Analog Devices' portfolio.
Replacement Considerations
LT1161CN#PBF
FAQ
Does the LT1161ISW require external components for its charge pumps?
No, each of the four independent switch channels contains a completely self-contained charge pump that requires no external components.
What type of MOSFETs does this driver support?
It is designed to allow the use of low-cost N-channel power MOSFETs for high-side switching applications.
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