LT8418ACBZ-R7

Overview

The LT8418ACBZ-R7 is a 100V half-bridge gate driver IC designed for Gallium Nitride (GaN) FETs. It operates on a supply voltage range of 3.85V to 5.5V and features a WLCSP-12 package. The device provides a peak source current of 4A and a peak sink current of 8A, with an upper pull-up resistance of 0.6Ω and a lower pull-down resistance of 0.2Ω. It exhibits a typical propagation delay of 10ns and a delay matching precision of 1.5ns between channels. The rise and fall times are both 2.5ns, with maximum turn-off and turn-on delays of 15ns and 16ns respectively. It functions within a temperature range of -40°C to +125°C.

Feature Summary

• Integrated intelligent bootstrap switch generates balanced bootstrap voltage from VCC with low dropout.
• Separate gate drive architecture allows independent adjustment of turn-on and turn-off slew rates to suppress ringing and optimize EMI performance.
• All inputs and outputs default to a low state to prevent GaN FET mis-triggering during power-up or fault conditions.
• Includes under-voltage lockout and over-voltage protection for reliable operation in abnormal working conditions.

Applications

• High-frequency DC-DC switching power converters
• Half-bridge, full-bridge, and push-pull converters
• Motor drivers and Class D audio amplifiers
• Data center power supplies

Procurement Notes

Verify the specific suffix R7 corresponds to the required reel packaging configuration when sourcing. Confirm that the WLCSP-12 package dimensions align with the target PCB footprint constraints. Ensure the operating environment remains within the specified -40°C to +125°C thermal limits. Validate input logic compatibility with the system's TTL levels before integration.

Selection Notes

Select this component for applications requiring high-speed switching with precise timing control. The integrated bootstrap functionality reduces external component count compared to standard drivers. The compact WLCSP package is suitable for space-constrained designs where minimizing parasitic inductance is critical for GaN performance.

Part Context

This part belongs to the LT8418 series of GaN-specific gate drivers from Analog Devices. It is engineered to address the unique requirements of wide-bandgap semiconductors, offering optimized drive strength and protection features not typically found in general-purpose MOSFET drivers.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

How does the LT8418 handle GaN FET switching speed?

It features separate gate drive controls allowing independent adjustment of turn-on and turn-off slew rates to manage switching speed, suppress ringing, and optimize EMI.

What is the default state of the inputs and outputs?

All driver inputs and outputs default to a low state to prevent GaN FET mis-triggering during power-up or fault conditions.