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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 8SOIC
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:High-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LTC1155IS8#PBF is a dual high-side micropower MOSFET driver manufactured by Analog Devices Inc. It operates within a supply voltage range of 4.5 V to 18 V and supports input voltages up to 22 V. The device features two drivers with two outputs, housed in an 8-lead SOIC surface-mount package. It functions across a temperature range of -40°C to +85°C, drawing a typical operating current of 180 µA. The maximum dead time is specified at 60 µs, ensuring reliable switching control for high-side N-channel MOSFET applications.
Feature Summary
- Dual high-side configuration designed specifically for driving N-channel MOSFETs
- Micropower operation capability with low quiescent current consumption
- Integrated protection against shoot-through via controlled dead-time management
Applications
- High-side switching in microprocessor-controlled power systems
- Battery-powered equipment requiring efficient power management
- Industrial motor control circuits utilizing N-channel MOSFETs
Procurement Notes
Verify the specific suffix IS8 corresponds to the industrial temperature grade and SOIC-8 package variant when sourcing. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure compatibility with system voltage levels ranging from 4.5 V to 18 V. Cross-reference datasheet revisions to confirm pinout consistency with existing designs.
Selection Notes
Select this component for applications requiring isolated high-side drive without external charge pumps. Consider the 180 µA standby current for battery-sensitive designs. Verify that the 22 V input limit aligns with the source logic levels. Evaluate thermal performance within the -40°C to +85°C operational envelope for industrial environments.
Part Context
This part belongs to the LTC1155 series of micropower MOSFET drivers from Analog Devices. It serves as a dual-channel solution for high-side switching, distinct from single-channel variants like the LTC1154. The IS8 designation indicates the industrial temperature range and surface-mount packaging, differentiating it from PDIP or commercial grade alternatives.
Replacement Considerations
LTC1155CN8#PBF
FAQ
Does the LTC1155IS8#PBF include an internal charge pump?
No, the LTC1155 does not contain an internal charge pump; it relies on bootstrap capacitors for gate drive voltage.
What is the maximum input voltage supported by this driver?
The device supports input voltages up to 22 V, while the supply voltage range is limited to 18 V maximum.
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