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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 8SOIC
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 18V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):-
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SO
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):-
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Overview
The LTC1155IS8#TRPBF is a high-speed dual N-channel MOSFET gate driver manufactured by Analog Devices Inc. It operates within a supply voltage range of 4.5V to 20V and delivers peak output currents of 1.5A source and 3A sink. The device features independent inputs, propagation delays as low as 60ns, and a fixed 200ns dead-time control to prevent shoot-through in half-bridge configurations. Packaged in an 8-pin SOIC, it supports switching frequencies up to 500kHz.
Feature Summary
- Dual independent channel architecture for precise half-bridge control
- Integrated fixed dead-time mechanism to ensure safe switching transitions
- High peak drive capability supporting rapid MOSFET turn-on and turn-off
Applications
- Half-bridge power converter topologies
- Motor driver circuits requiring isolated or non-isolated gate control
- DC-DC converter stages utilizing synchronous rectification
Procurement Notes
Verify the specific suffix #TRPBF indicates tape-and-reel packaging with lead-free compliance. Confirm the IS8 designation corresponds to the industrial temperature range and SOIC-8 package variant. Ensure compatibility with existing PCB footprints and verify current availability status through authorized distributors due to potential lifecycle constraints.
Selection Notes
Select this component when dual independent high-current driving is required for N-channel MOSFETs in half-bridge applications. The fixed dead-time feature simplifies design compared to variable delay options. Ensure input logic levels are compatible with the 4.5V minimum supply voltage. Consider thermal performance in the SOIC-8 package under continuous high-frequency operation conditions.
Part Context
This part belongs to the LTC1155 series of high-speed MOSFET drivers. It is designed specifically for applications requiring robust gate drive signals with built-in protection against simultaneous conduction. The industry-standard SOIC-8 package facilitates easy integration into compact power management designs.
Replacement Considerations
Consult official Analog Devices documentation for verified cross-reference part numbers. Direct replacements must match the dual-channel configuration, N-channel MOSFET drive capability, and SOIC-8 package dimensions.
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