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LTC3803ES6-5#TRPBF is listed in the DC DC Switching Controllers range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC REG CTRLR FLYBACK TSOT23-6. Review the specifications below when checking this part for your BOM.
The LTC3803ES6-5#TRPBF is a constant frequency current mode flyback DC/DC controller manufactured by Analog Devices Inc. It operates from an input voltage range of 5.7V to 75V and provides a fixed output voltage of 5V. The device supports up to 1A output current with a switching frequency of 200kHz. It features a maximum duty cycle of 80% and draws a static supply current of 240uA. The component is housed in a TSOT-23-6 package and functions within a temperature range of -40°C to +125°C TJ.
Verify the specific suffix ES6-5 against official Analog Devices documentation to confirm pinout compatibility and electrical characteristics. Ensure the TSOT-23-6 package dimensions match the target PCB footprint. Confirm RoHS compliance status through the manufacturer's latest datasheet revision notes before finalizing procurement specifications.
Select this controller for applications requiring a fixed 5V output from inputs up to 75V. Consider the 200kHz switching frequency for passive component sizing. Evaluate the 240uA quiescent current against system standby requirements. Verify that the external N-channel MOSFET selection aligns with the controller's drive capabilities and the specified 80% maximum duty cycle constraints.
This component belongs to the LTC3803 series of flyback controllers. The ES6-5 designation indicates a specific output voltage configuration and package type within the broader family. It shares architectural similarities with other models in the series but differs in fixed output parameters and thermal grade variations defined by the manufacturer.
Direct substitutes include other Analog Devices flyback controllers with compatible TSOT-23-6 packaging and similar input voltage ranges. Verify functional equivalence regarding current mode operation and N-channel MOSFET drive strength before substitution.
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