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LTC4380HMS-2#PBF is listed in the Surge Suppression ICS range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC LOW CUR SURGE STOPPER 10MSOP. Review the specifications below when checking this part for your BOM.
The LTC4380HMS-2#PBF is a board mount surge protector from Analog Devices, designed as a low quiescent current surge stopper. It utilizes an MSOP-10 package with SMD/SMT termination and measures 3 mm in length and width, with a height of 0.86 mm. The device operates within a voltage range of 4 VDC to 72 VDC and features a maximum operating current of 20 uA. It supports an extended temperature range from -40°C to +125°C and holds AEC-Q100 qualification for automotive applications.
Verify the specific suffix against official documentation, as the provided model uses #PBF while source data references #WPBF. Confirm availability status through authorized channels due to restricted supply indications. Ensure the component meets AEC-Q100 requirements if deployed in automotive contexts. Cross-reference the MSOP-10 package dimensions for PCB layout compatibility.
Select this component for applications requiring protection against high voltage transients up to 72V. The fixed gate clamp version is appropriate for standard 12V or 24V/28V system architectures. Consider the low operating current for power-sensitive designs. Verify thermal performance within the specified -40°C to +125°C operational range.
This part belongs to the LTC4380 series of surge suppressors manufactured by Analog Devices. It functions as a specialized PMIC for circuit protection rather than power regulation. The series includes adjustable clamp variants for different voltage systems, whereas this specific model provides fixed clamping characteristics.
LTC4380IMS-2#WPBF
It clamps the gate voltage of an external N-channel MOSFET to limit the output voltage to a safe value during overvoltage events.
An internal multiplier generates a current on the TMR pin proportional to VDS and ID to limit operating time during overcurrent and overvoltage conditions according to MOSFET stress.
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