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LTC4380IDD-3#TRPBF is listed in the Surge Suppression ICS range at ChipApex. The manufacturer field lists Analog Devices Inc.. Its product description is IC LOW CUR SURGE STOPPER 10DFN. Review the specifications below when checking this part for your BOM.
The LTC4380IDD-3#TRPBF is a low quiescent current surge stopper designed to protect loads from high voltage transients. It operates within a voltage range of 4 V to 72 V and features an operating current of 8 µA. The component is housed in a DFN-10 package with dimensions of 3 mm x 3 mm x 0.75 mm. It supports surface mount installation and functions reliably across a temperature range of -40°C to +125°C.
Verify the specific suffix #TRPBF confirms the tape and reel packaging format required for automated assembly processes. Confirm that the IDD variant matches the design requirement for adjustable gate clamp functionality rather than fixed voltage options. Ensure the DFN-10 footprint aligns with the PCB layout specifications before finalizing procurement orders.
Select this component when system design requires protection against high voltage transients up to 72 V while maintaining minimal power consumption. The adjustable gate clamp feature allows flexibility for various system voltages beyond standard 12V or 24V configurations. Consider the low quiescent current for always-on or battery-powered applications where standby power efficiency is critical.
This part belongs to the LTC4380 series of surge suppressors manufactured by Analog Devices Inc. The series focuses on protecting sensitive electronics from voltage spikes using external MOSFET control. The IDD-3 designation indicates the adjustable clamp version packaged in a tape and reel format suitable for high-volume manufacturing environments.
LTC4380HDD-3#TRPBF
The GATE pin can drive back-to-back MOSFETs to provide reverse input protection, which eliminates the voltage drop and power dissipation typically found in Schottky diode solutions.
An internal multiplier generates a TMR pin current proportional to VDS and ID, limiting the operating time in both overcurrent and overvoltage conditions in accordance with the external MOSFET's stress capabilities.
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