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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:High-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4V ~ 15V
- Logic Voltage - VIL, VIH:1.3V, 1.6V
- Current - Peak Output (Source, Sink):2.4A, 2.4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):10ns, 7ns
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):80 V
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Overview
The LTC4440EMS8E-5#PBF is a high-speed, high-voltage N-channel MOSFET gate driver designed for high-side switching applications. Manufactured by Analog Devices Inc., it operates within an input voltage range of 6.5 V to 80 V and supports supply voltages from 4 V to 15 V. The device delivers peak output currents of 2.4 A with rise and fall times of 100 ns and 70 ns, respectively. It is housed in an 8-lead MSOP-E package and functions reliably across an operating temperature range of -40°C to +85°C.
Feature Summary
- High-side gate driving capability for N-channel MOSFETs
- Integrated bootstrap diode for charge pump operation
- Non-inverting logic input compatibility
Applications
- High-side switching in DC-DC converters
- Motor control systems requiring high-voltage isolation
- Power management circuits with floating loads
Procurement Notes
Verify component authenticity through authorized Analog Devices distributors or certified partners. Confirm the specific suffix matches the required package and temperature grade. Request original manufacturer documentation to validate RoHS compliance and traceability. Ensure storage conditions maintain integrity prior to assembly.
Selection Notes
Select this component when high-side drive is required for voltages up to 80 V. Consider the MSOP-E package size constraints and thermal requirements. Evaluate the 2.4 A output current against the target MOSFET gate charge. Verify that the bootstrap circuit design accommodates the specified rise and fall times for the application frequency.
Part Context
This part belongs to the LTC4440 series of high-voltage gate drivers. It is specifically engineered for applications requiring robust high-side switching performance. The EMS8E designation indicates the MSOP-E package variant. It serves as a critical interface between low-voltage control logic and high-voltage power stages.
Replacement Considerations
Consult official Analog Devices documentation for verified substitute part numbers. Cross-reference pinout compatibility and electrical specifications before substitution.
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